IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7677787980...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGHL50T65MQDT


IGBT Transistors FS4 MID SPEED IGBT 650V 50A TO247-3L WITH FULL RATED CURRENT DIODE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 84
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AUD 1.2727
Multiples of: 1

        TO - 247 - 3       
IGW50N65F5


Transistor: IGBT; 650V; 80A; 270W; TO247-3; Series: F5
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Infineon 84
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AUD 2.7029
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      270 W   Trenchstop 5    F5
SPT50N65F1A1


TO-247-3 IGBTs ROHS
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SPTECH 82
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AUD 2.2462
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HGTG11N120CND


IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dd
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ON Semiconductor 82
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AUD 3.9684
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      298 W         
DG20X06T2


Transistor: IGBT; 600V; 29A; 166W; TO247
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STARPOWER 80
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AUD 2.72
Multiples of: 1

      166 W         
MSG30T65FS


30A 650V TO-220F IGBT Transistors / Modules ROHS
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MASPOWER 79
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AUD 1.0396
Multiples of: 1

                
NCE30TD60BF


35.5W 60A 600V Trench TO-220F-3 IGBTs ROHS
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NCE Power 79
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AUD 1.6821
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STGWA40M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 79
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AUD 4.0224
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Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
STGWA15H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STMicroelectronics 79
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AUD 5.02
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Single1200 V2.5 V20 V30 A+/- 250 nA    SiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
IKQ75N120CS6XKSA1


Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
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Infineon 79
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AUD 10.22
Multiples of: 1

      440 W   Trenchstop 6     
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