IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Collector- Emitter Voltage VCEO Max
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
G40T120AK3S


278W 238ns 77ns +150℃@(Tj) 80A 1.2kV 6V@250uA 208nC@40A,15V 1.9V@10A,15V 1.5mJ 2.8mJ 1mA@1.2kV 6.618nF@25V 2.4V@20A 160A TO-247 IGBTs ROHS
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CRMICRO 3240
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AUD 2.5084
Multiples of: 1

                
IKP20N60H3


IGBT Transistors 600V HI SPEED SW IGBT
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Infineon 153
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AUD 2.5825
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Single600 V1.95 V20 V20 A100 nA170 W TO - 220 - 3 FPTubeSiThrough Hole170 W- 40 C+ 175 CIkp20n60
SGW20N60HS


IGBT Transistors HIGH SPEED NPT TECH 600V 20A
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Infineon 153
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AUD 3.5514
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Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CSgw20n60
IXXH30N60B3


IGBT Transistors IGBT XPT-GENX3
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IXYS 151
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AUD 4.7614
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         TubeSi     
IXXK100N60C3H1


IGBT Transistors XPT IGBT C3-Class 600V/170Amp CoPacked
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IXYS 149
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AUD 29.6371
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 600 V2.2 V20 V170 A100 nA  TO - 264TubeSiThrough Hole695 W- 55 C+ 150 CIxxk100n60
MLG50N65FUK


50A 650V FS(Field Stop) TO-247 IGBT Transistors / Modules ROHS
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Minos 148
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AUD 1.8295
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MSG20T65FQS


20A 650V TO-220F IGBT Transistors / Modules ROHS
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MASPOWER 147
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AUD 0.948
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IKWH30N65WR6


TO-247-3 IGBTs ROHS
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Infineon 145
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AUD 3.9231
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IXGN320N60A3


IGBT Transistors 320 Amps 600V
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IXYS 144
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AUD 60.6886
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Single Dual Emitter600 V +/- 20 V    SOT - 227B - 4TubeSiSmd/Smt - 55 C+ 150 CIxgn320n60
AOKS40B65H2AL


Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
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Alpha & Omega 136
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AUD 3.5206
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  2.05 V   105 W         
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First...7172737475...

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