IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
BXPD-E75T65HD-0000


Transistor: IGBT; 650V; 75A
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Bridgelux 134
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AUD 3.6222
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IGW50N65F5


Transistor: IGBT; 650V; 80A; 270W; TO247-3; Series: F5
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Infineon 126
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AUD 2.7418
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      270 W   Trenchstop 5    F5
IXYN140N120A4


IGBT Transistors XPT thin-wafer technology 4th generation GenX4 Trench IGBT. Disc IGBT XPT-GenX4 SOT-227B miniBLOC
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IXYS 126
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AUD 71.0286
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         Tube      
STGW25S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 122
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AUD 10.581
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Single1.2 kV1.6 V+/- 20 V50 A250 nA  TO 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
AUIRGR4045D


Transistor: IGBT; IGBT Trench; 600V; 6A; 39W; DPAK
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Infineon 121
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AUD 2.0429
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      39 W   Igbt Trench     
NGTB50N60FL2WG


IGBT Transistors 600V/50A FAST IGBT FSII T
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ON Semiconductor 119
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AUD 5.8654
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         TubeSi     
FGB20N60SF


IGBT Transistors 600V, 20A Field Stop IGBT
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ON Semiconductor 116
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AUD 2.791
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 600 V2.2 V20 V40 A400 nA208 W D2PAKReelSiSmd/Smt208 W  Fgb20n60sf
DG30X07T2


Transistor: IGBT; 650V; 30A; 208W; TO247
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STARPOWER 116
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AUD 3.6721
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      208 W         
IXYP8N90C3D1


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs
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IXYS 116
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AUD 3.7738
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Single900 V2.15 V30 V20 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 175 CIxyp8n90
IKFW50N65EH5XKSA1


IGBT Trench Field Stop 650V 59A 124W Through Hole PG-HSIP247-3-2
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Infineon 116
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AUD 5.8385
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
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First...7172737475...

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