IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXA45IF1200HB


IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 116
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AUD 18.8397
Multiples of: 1

Single1200 V1.8 V20 V78 A500 nA  TO - 247 - 3TubeSiThrough Hole325 W- 55 C+ 150 CIxa45if1200hb
IGW25N120H3


Transistor: IGBT; 1200V; 50A; 326W; TO247-3; Series: H3
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Infineon 115
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AUD 7.1333
Multiples of: 1

      326 W   Trenchstop 3    H3
APT33GF120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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Microchip 115
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AUD 13.0429
Multiples of: 1

Single1.2 kV2.5 V30 V52 A100 nA  TO - 247 - 3TubeSiThrough Hole297 W- 55 C+ 150 C 
IXYA20N120B4HV


IGBT Transistors 4TH GENERATION GENX4TRENCH
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IXYS 114
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AUD 5.4662
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         Tube      
IKW50N65ES5


IGBT Transistors Trenchstop 5 IGBT
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Infineon 113
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AUD 2.8267
Multiples of: 1

Single650 V1.35 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole274 W- 40 C+ 175 CTrenchstop 5 S5
STGW20H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics 112
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AUD 2.654
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Single650 V1.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole168 W- 55 C+ 175 C600 - 650V Igbts
IKW15N120H3


Transistor: IGBT; 1200V; 30A; 217W; TO247-3; Series: H3
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Infineon 112
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AUD 3.0866
Multiples of: 1

      217 W   Trenchstop 3    H3
IKW08T120FKSA1


Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
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Infineon 109
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AUD 2.9159
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      70 W   Trenchstop     
IXYN100N120C3


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 109
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AUD 41.9222
Multiples of: 1

Single1200 V2.9 V30 V152 A100 nA  SOT - 227B - 4TubeSiSmd/Smt830 W- 55 C+ 175 CIxyn100n120
IKB10N60T


Trans IGBT Chip N-CH 600V 24A 3-Pin(2+Tab) D2PAK
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Infineon 108
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AUD 0.921
Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt110 W- 40 C+ 175 CTrenchstop Igbt
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First...7172737475...

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