IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKP20N65H5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon 117
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AUD 1.7443
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Single650 V1.65 V20 V42 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 40 C+ 175 CTrenchstop 5 H5
MSG40T65FL


40A 650V TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 116
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AUD 3.4496
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IKP20N60H3


IGBT Transistors 600V HI SPEED SW IGBT
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Infineon 116
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AUD 3.5222
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Single600 V1.95 V20 V20 A100 nA170 W TO - 220 - 3 FPTubeSiThrough Hole170 W- 40 C+ 175 CIkp20n60
STGWT40HP65FB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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STMicroelectronics 116
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AUD 3.86
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Single650 V1.6 V+/- 30 V80 A+/- 250 nA  TO - 3P - 3 SiThrough Hole283 W- 55 C+ 175 C 
RGS80TS65HRC11


IGBT Trench Field Stop 650 V 73 A 272 W Through Hole TO-247N
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ROHM 116
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AUD 5.5504
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Single650 V1.65 V30 V73 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole272 W- 40 C+ 175 C 
IKFW50N65EH5XKSA1


IGBT Trench Field Stop 650V 59A 124W Through Hole PG-HSIP247-3-2
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Infineon 116
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AUD 5.8385
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        TO - 247 - 3Tube     Trenchstop 5
IXGH50N90B2


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS 116
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AUD 10.56
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Single900 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh50n90
IKP10N60T


Transistor: IGBT; 600V; 10A; 110W; TO220AB
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Infineon 115
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AUD 1.03
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      110 W         
IGW20N60H3FKSA1


Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247
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Infineon 115
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AUD 1.6891
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IXGA12N120A3


IGBT Transistors 1200V, 12A IGBT; G Series
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IXYS 114
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AUD 3.9757
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Single1.2 kV2.4 V20 V22 A100 nA  TO - 263AA - 3TubeSiSmd/Smt100 W- 55 C+ 150 CIxga12n120
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First...7172737475...

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