IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGP20N60H3


Transistor: IGBT; 600V; 20A; 170W; TO220-3
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Infineon 151
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AUD 1.0497
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      170 W         
NCE07TD60BD


IGBTs TO-263 RoHS
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NCE Power 149
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AUD 0.2688
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IXXK100N60C3H1


IGBT Transistors XPT IGBT C3-Class 600V/170Amp CoPacked
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IXYS 149
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AUD 31.46
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 600 V2.2 V20 V170 A100 nA  TO - 264TubeSiThrough Hole695 W- 55 C+ 150 CIxxk100n60
NCE40TD65BT


TO-247 IGBTs ROHS
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NCE Power 148
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AUD 2.1349
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MSG20T65FQS


20A 650V TO-220F IGBT Transistors / Modules ROHS
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MASPOWER 147
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AUD 1.7174
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ISL9V3040S3ST-F085C


IGBT Transistors ECOSPARK1 IGN-IGBT
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ON Semiconductor 145
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AUD 1.7745
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Single400 V1.25 V10 V21 A  Aec - Q101DPAK - 3Cut TapeSiSmd/Smt150 W- 55 C+ 175 C 
STGP10M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics 145
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AUD 1.92
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         TubeSi    600 - 650V Igbts
FGY100T65SCDT


IGBT Transistors FS3TIGBT TO247 100A 650V
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ON Semiconductor 145
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AUD 13.0114
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Single650 V1.5 V25 V200 A400 nA  TO - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
IXYX50N170C


Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
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IXYS 145
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AUD 56.9739
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      1.5 kW   Xpt     
IXYA15N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 144
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AUD 3.64
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Single650 V1.96 V20 V38 A100 nA  TO - 263 - 3 SiSmd/Smt200 W- 55 C+ 175 C 
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