IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AUIRG4PH50S


International Rectifier IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
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Infineon 17225
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AUD 10.067
Multiples of: 1

Single1.2 kV1.7 V+/- 20 V57 A  Aec - Q101TO - 247 - 3TubeSiThrough Hole200 W- 55 C  
IXBX25N250


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS 193
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AUD 68.53
Multiples of: 1

Single2.5 kV3.3 V20 V55 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CVery High Voltage
GT50JR22(STA1ES)


Toshiba IGBT Transistors IGBT for Soft Switching Apps
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Toshiba 191
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AUD 4.3172
Multiples of: 1

          Si    Gt50jr22
IXGN400N60A3


IGBT Transistors 400 Amps 600V
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IXYS 187
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AUD 95.4014
Multiples of: 1

Single600 V1.25 V20 V400 A400 nA  SOT - 227BTubeSiSmd/Smt830 W- 55 C+ 150 CIxgn400n60
IXGN100N170


IGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A
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IXYS 187
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AUD 107.69
Multiples of: 1

Single1.7 kV2.5 V20 V160 A200 nA  SOT - 227B - 4TubeSiSmd/Smt735 W- 55 C+ 150 CIxgn100n170
IXDH20N120


IGBT Transistors 20 Amps 1200V
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IXYS 186
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AUD 8.6053
Multiples of: 1

Single1200 V2.4 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxdh20n120
IXYH40N120B3D1


IGBT Transistors IGBT XPT-GENX3
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IXYS 186
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AUD 12.0529
Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole   Planar
IXYX120N120C3


IGBT Transistors IGBT XPT-GENX3
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IXYS 186
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AUD 45.1943
Multiples of: 1

        TO - 247PLUS - 3TubeSiThrough Hole   Planar
IXYN100N120C3H1


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 186
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AUD 51.4329
Multiples of: 1

Single1.2 kV2.9 V20 V134 A100 nA  SOT - 227B - 4TubeSiSmd/Smt690 W- 55 C+ 150 CIxyn100n120
IKW40N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon 185
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AUD 3.3943
Multiples of: 1

Single650 V1.35 V20 V79 A100 nA  TO - 247 - 3TubeSiThrough Hole230 W- 40 C+ 175 CTrenchstop 5 S5
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