IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6162636465...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW40T120


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 200
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AUD 12.5205
Multiples of: 1

Single1200 V1.7 V+/- 20 V75 A600 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 150 CIkw40t120
FGA40T65UQDF


IGBT Transistors 650V Field Stop Trench IGBT
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ON Semiconductor 198
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AUD 3.39
Multiples of: 1

Single650 V1.33 V+/- 20 V80 A+/- 400 nA  TO - 3PN - 3 SiThrough Hole231 W- 55 C+ 175 CFga40t65uqdf
IKW50N65EH5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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Infineon 198
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AUD 5.58
Multiples of: 1

Single650 V1.65 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole275 W- 40 C+ 175 CTrenchstop 5 H5
AUIRG4PC40S-E


IGBT Transistors DISCRETES
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Infineon 198
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AUD 10.34
Multiples of: 1

Single600 V1.32 V+/- 20 V60 A+/- 100 nA Aec - Q101TO - 247AD - 3TubeSiThrough Hole160 W- 55 C+ 150 C 
IXGH48N60C3D1


IGBT Transistors 30 Amps 600V
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IXYS 198
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AUD 12.72
Multiples of: 1

Single600 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh48n60
CRGMF100T120FSA3


34mm IGBTs ROHS
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CRMICRO 197
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AUD 27.3234
Multiples of: 1

                
IXXH30N65B4


IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
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IXYS 196
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AUD 6.3329
Multiples of: 1

Single650 V1.66 V20 V65 A100 nA  TO - 247AD - 3TubeSiThrough Hole230 W- 55 C+ 175 CIxxh30n65
SL15T65FK


TO-263 IGBTs ROHS
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SLKORMICRO 194
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AUD 0.8324
Multiples of: 1

                
IRGR3B60KD2TRP


International Rectifier IGBT Transistors
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Infineon 194
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AUD 2.8653
Multiples of: 1

Single600 V1.9 V+/- 20 V7.8 A100 nA  DPAK - 3ReelSiSmd/Smt52 W- 55 C+ 150 CRc
RGTH50TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM 194
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AUD 3.9323
Multiples of: 1

 650 V1.6 V+/- 30 V50 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole174 W- 40 C+ 175 CRgth50ts65
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First...6162636465...

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