IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6162636465...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKZ50N65EH5XKSA1


Transistor: IGBT; 650V; 54A; 136W; TO247-4; Series: H5
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Infineon 232
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AUD 4.0333
Multiples of: 1

      136 W   Trenchstop 5    H5
AOK40B65H1


Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
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Alpha & Omega 232
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AUD 5.3934
Multiples of: 1

  1.9 V   150 W         
IKW40T120FKSA1


Transistor: IGBT; 1.2kV; 40A; 270W; PG-TO247-3
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Infineon 232
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AUD 8.6062
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      270 W   Trenchstop     
AOKS40B65H2AL


Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
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Alpha & Omega 231
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AUD 3.6222
Multiples of: 1

  2.05 V   105 W         
IXA12IF1200PB


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 230
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AUD 6.6169
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Single1200 V1.8 V20 V20 A500 nA  TO - 220 - 3TubeSiThrough Hole85 W- 55 C+ 150 CIxa12if1200
IGW75N60H3


Transistor: IGBT; 600V; 75A; 428W; TO247-3
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Infineon 230
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AUD 6.67
Multiples of: 1

      428 W         
AOK75B60D1


Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ
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Alpha & Omega 230
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AUD 9.6667
Multiples of: 1

  1.72 V   300 W         
IXDH20N120


IGBT Transistors 20 Amps 1200V
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IXYS 230
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AUD 9.7778
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Single1200 V2.4 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxdh20n120
AOK20B135D1


Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
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Alpha & Omega 229
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AUD 6.4444
Multiples of: 1

  1.57 V   170 W         
IGW40N65F5AXKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 229
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AUD 6.6538
Multiples of: 1

Single650 V1.6 V+/- 20 V74 A100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 40 C+ 175 CTrenchstop 5 F5
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First...6162636465...

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