IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6162636465...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGB10N60T


Infineon Technologies IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 240
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AUD 0.6288
Multiples of: 1

Single600 V2.05 V20 V20 A100 nA  PG - TO - 263 - 3ReelSiSmd/Smt110 W- 40 C+ 175 CIgb10n60
FGH20N60UFDTU


IGBT Transistors 600V 20A Field Stop
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ON Semiconductor 240
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AUD 2.7034
Multiples of: 1

Single600 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh20n60
IGW30N65L5XKSA1


IGBT Transistors 650V IGBT Trenchstop 5
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Infineon 240
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AUD 3.1438
Multiples of: 1

Single650 V1.05 V20 V85 A100 nA  TO - 247 - 3TubeSiThrough Hole227 W- 40 C+ 175 CTrenchstop 5 L5
IXGP30N120B3


IGBT Transistors 30 Amps 1200V
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IXYS 239
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AUD 8.5969
Multiples of: 1

         TubeSi    Ixgp30n120
IXGH6N170


IGBT Transistors 12 Amps 1700 V 4 V Rds
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IXYS 238
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AUD 11.227
Multiples of: 1

Single1.7 kV3 V20 V12 A100 nA  TO - 247AD - 3TubeSiThrough Hole75 W- 55 C+ 150 CIxgh6n170
FGA50S110P


Fairchild Semiconductor IGBT Transistors 1100 V, 50 A Shorted-anode IGBT
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ON Semiconductor 236
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AUD 2.594
Multiples of: 1

 1100 V2.7 V25 V50 A500 nA  TO - 3PNTubeSiThrough Hole300 W- 55 C+ 175 CFga50s110p
RGS60TS65DHRC11


IGBT Transistors 650V 30A FIELD STOP TRENCH
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ROHM 236
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AUD 5.894
Multiples of: 1

Single650 V1.65 V30 V56 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole223 W- 40 C+ 175 C 
Hot IKW30N60H3


IGBT Transistors 600V 30A 187W
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Infineon 232
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AUD 1.7228
Multiples of: 1

Single600 V1.95 V20 V30 A100 nA187 W TO - 247TubeSiThrough Hole187 W- 40 C+ 150 CIkw30n60
IKW15N120BH6XKSA1


Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
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Infineon 232
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AUD 3.7111
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      100 W   Trenchstop 6     
IKW50N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon 232
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AUD 3.9311
Multiples of: 1

Single650 V1.35 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole274 W- 40 C+ 175 CTrenchstop 5 S5
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First...6162636465...

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