IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW30N60T


IGBT Transistors LOW LOSS IGBT TECH 600V 30A
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Infineon 695
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AUD 2.3729
Multiples of: 1

Single600 V1.5 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 150 CIgw30n60
IXBT6N170


IGBT Transistors 12 Amps 1700V 3.6 Rds
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IXYS 250
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AUD 17.6
Multiples of: 1

Single1.7 kV2.84 V+/- 20 V12 A100 nA  TO - 268 - 3TubeSiSmd/Smt75 W- 55 C+ 150 CIxbt6n170
BIDNW30N60H3


IGBT Transistors IGBT Discrete 600V, 30A in TO-247N
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Bourns 249
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AUD 2.9543
Multiples of: 1

Single600 V1.65 V- 20 V , + 20 V60 A   TO - 247N - 3TubeSiThrough Hole230 W- 55 C+ 150 CBID
FGA25S125P_SN00337


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 247
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AUD 4.5321
Multiples of: 1

Single1250 V1.8 V6 V50 A500 nA  TO - 3PNBulkSiThrough Hole250 W- 55 C+ 175 CFga25s125p
STGP10NB60SD


IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH
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STMicroelectronics 246
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AUD 1.4913
Multiples of: 1

Single600 V +/- 20 V  3.5 W TO - 220 - 3Tube Through Hole - 65 C+ 150 CStgp10nb60sd
IKW40N65WR5XKSA1


Transistor: IGBT; 650V; 40A; 115W; TO247-3
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Infineon 244
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AUD 2.0429
Multiples of: 1

      115 W   Trenchstop 5     
STGWT80H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics 244
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AUD 5.4871
Multiples of: 1

Single650 V1.6 V20 V120 A250 nA  TO - 3PTubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
MSG20T65HPE0


20A 650V TO-263 IGBT Transistors / Modules ROHS
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MASPOWER 239
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AUD 0.7061
Multiples of: 1

                
STGW39NC60VD


Transistor: IGBT; 600V; 40A; 250W; TO247-3
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STMicroelectronics 214
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AUD 2.1745
Multiples of: 1

      250 W         
SGT40N60NPFDPN


IGBTs Field Stop 600V 80A TO-3P RoHS
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Silan 189
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AUD 1.2902
Multiples of: 1

                
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First...5657585960...

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