IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKD06N60RF


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon 248
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AUD 0.4235
Multiples of: 1

Single600 V2.2 V+/- 20 V12 A100 nA  TO - 252 - 3ReelSiSmd/Smt100 W- 40 C+ 175 CRc
IXGT32N170


IGBT Transistors 72 Amps 1700 V 3.3 V Rds
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IXYS 248
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AUD 33.2095
Multiples of: 1

Single1.7 kV2.5 V20 V75 A100 nA  TO - 268 - 3TubeSiSmd/Smt350 W- 55 C+ 150 CIxgt32n170
GT15J341,S4X(S


Transistor: IGBT; 600V; 15A; 30W; TO220FP
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Toshiba 245
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AUD 2.7333
Multiples of: 1

      30 W         
IGW20N60H3FKSA1


Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247
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Infineon 245
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AUD 1.755
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IKW75N65EL5XKSA1


Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5
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Infineon 244
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AUD 4.909
Multiples of: 1

Single650 V1.1 V20 V80 A100 nA  PG - TO 247 - 3TubeSiThrough Hole536 W- 40 C+ 175 CTrenchstop 5 L5
STGWT80H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics 244
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AUD 5.8667
Multiples of: 1

Single650 V1.6 V20 V120 A250 nA  TO - 3PTubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
IKP10N60T


Transistor: IGBT; 600V; 10A; 110W; TO220AB
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Infineon 242
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AUD 0.8587
Multiples of: 1

      110 W         
IRGP4062-EPBF


IGBT Transistors IR IGBT 600V 600V 24A TO-247AD
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Infineon 242
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AUD 3.869
Multiples of: 163

 600 V2.04 V20 V48 A100 nA250 W TO - 247TubeSiThrough Hole250 W   
IXXK300N60B3


IGBT Transistors XPT 600V IGBT 300A
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IXYS 242
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AUD 37.0954
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         TubeSi    Ixxk300n60
IKA08N65H5


IGBT Transistors IGBT PRODUCTS
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Infineon 241
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AUD 1.0688
Multiples of: 1

Single650 V1.65 V+/- 20 V10.8 A100 nA  TO - 220 - 3TubeSiThrough Hole31.2 W- 40 C+ 175 CIka08n65
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First...5657585960...

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