IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH16N170


IGBT Transistors 32 Amps 1700 V 3.5 V Rds
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IXYS 425
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AUD 11.0985
Multiples of: 1

Single1.7 kV2.7 V+/- 20 V32 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
IXGH48N60A3D1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
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IXYS 286
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AUD 4.2481
Multiples of: 1

 600 V1.18 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXBH10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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IXYS 286
Ships to you
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AUD 8.0612
Multiples of: 1

Single1700 V2.3 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh10n170
IXXX200N65B4


IGBT Transistors 650V/370A Trench IGBT GenX4 XPT
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IXYS 286
Ships to you
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AUD 43.6508
Multiples of: 1

Single650 V 20 V370 A200 nA  PLUS247 - 3TubeSiThrough Hole1150 W- 55 C+ 175 CIxxx200n65
GT30J122A(STA1,E,D


IGBTs TO-3PN RoHS
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Toshiba 285
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AUD 2.0175
Multiples of: 1

                
IXYH75N65C3H1


IGBT Transistors 650V/170A XPT C3-Class TO-247
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IXYS 283
Ships to you
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AUD 18.5603
Multiples of: 1

Single650 V1.8 V30 V170 A100 nA  TO - 247AD - 3TubeSiThrough Hole750 W- 55 C+ 175 CIxyh75n65
IXGH50N90B2


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS 282
Ships to you
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AUD 11.5418
Multiples of: 1

Single900 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh50n90
IGP40N65F5XKSA1


Transistor: IGBT; 650V; 45A; 125W; TO220-3; Series: F5
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Infineon 279
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AUD 1.6582
Multiples of: 1

      125 W   Trenchstop 5    F5
Hot FGB3056-F085


IGBT Transistors ECOSPARK IGNITION IGBT
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ON Semiconductor 276
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AUD 2.1316
Multiples of: 1

Single560 V1 V+/- 10 V29 A40 uA  TO - 263ABCut TapeSiSmd/Smt200 W- 40 C+ 175 CFgb3056_F085
IXGH10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS 267
Ships to you
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AUD 7.3224
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh10n170
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First...5657585960...

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