IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW60N60H3


Transistor: IGBT; 600V; 60A; 416W; TO247-3; Series: H3
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Infineon 256
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AUD 4.1171
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      416 W   Trenchstop    H3
IXGH2N250


IGBT Transistors IGBT NPT-VERY HI VOLTAGE
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IXYS 256
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AUD 29.2757
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        TO - 247AD - 3TubeSiThrough Hole   Very High Voltage
IGW15T120


Transistor: IGBT; 1200V; 15A; 110W; TO247-3
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Infineon 255
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AUD 3.2214
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      110 W         
IKW50N60H3FKSA1


Transistor: IGBT; 600V; 30A; 94W; TO247-3; Series: H3
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Infineon 254
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AUD 5.0223
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      94 W   Trenchstop 3    H3
IXYH40N120C3D1


IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
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IXYS 253
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AUD 11.6914
Multiples of: 1

Single1200 V4.8 V30 V64 A100 nA  TO - 247AD - 3TubeSiThrough Hole480 W- 55 C+ 150 CIxyh40n120
IXXH40N65B4


IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
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IXYS 252
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AUD 5.7357
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Single650 V1.5 V20 V120 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh40n65
IXYB82N120C3H1


IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
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IXYS 251
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AUD 36.0114
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Single1200 V2.75 V30 V164 A100 nA  TO - 264 - 3TubeSiThrough Hole1040 W- 55 C+ 150 CIxyb82n120
BIDNW30N60H3


IGBT Transistors IGBT Discrete 600V, 30A in TO-247N
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Bourns 249
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AUD 3.19
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Single600 V1.65 V- 20 V , + 20 V60 A   TO - 247N - 3TubeSiThrough Hole230 W- 55 C+ 150 CBID
IKW40N120CS6


500W 80A 1200V Trench Field Stop TO-247-3 IGBTs ROHS
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Infineon 249
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AUD 4.503
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IXA12IF1200HB


IGBT Transistors XPT IGBT Copack
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IXYS 249
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AUD 5.58
Multiples of: 1

Single1200 V1.8 V20 V20 A500 nA  TO - 247 - 3TubeSiThrough Hole85 W- 55 C+ 150 CIxa12if1200
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