IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NCE60TD60BT


TO-247-3 IGBTs ROHS
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NCE Power 279
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AUD 2.102
Multiples of: 1

                
IXBF20N360


IGBT Transistors 3600V/45A Reverse Conducting IGBT
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IXYS 279
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AUD 92.0543
Multiples of: 1

        ISOPLUS - I4 - PAK - 3TubeSiThrough Hole    
IXGH25N160


IGBT Transistors 75 Amps 1600V 2.5 Rds
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IXYS 278
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AUD 13.5929
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Single1600 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh25n160
IXXK160N65B4


IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
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IXYS 278
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AUD 36.44
Multiples of: 1

Single650 V1.54 V20 V310 A200 nA  TO - 264 - 3TubeSiThrough Hole940 W- 55 C+ 175 CIxxk160n65
IXBH42N170A


IGBT Transistors BIMOSET 42A 1700V
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IXYS 278
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AUD 47.2529
Multiples of: 1

Single1700 V5.2 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh42n170
STGWT30H65FB


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 274
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AUD 2.1686
Multiples of: 1

Single650 V1.75 V+/- 20 V30 A250 nA260 W TO - 3PTubeSiThrough Hole260 W- 55 C+ 175 CStgwt30h65fb
IGW60N60H3


Transistor: IGBT; 600V; 60A; 416W; TO247-3; Series: H3
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Infineon 273
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AUD 4.4786
Multiples of: 1

      416 W   Trenchstop    H3
AUIRGPS4070D0


IGBT Transistors DISCRETES
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Infineon 273
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AUD 22.3884
Multiples of: 1

Single600 V1.7 V20 V240 A100 nA Aec - Q101SUPER - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
IHW30N135R5XKSA1


IGBT Transistors TRENCHSTOP RC-H5 1200V IGBT
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Infineon 235
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AUD 3.58
Multiples of: 1

Single1350 V1.65 V20 V60 A100 uA  TO - 247 - 3TubeSiThrough Hole330 W- 40 C+ 175 CRc - H5
IGW40N65H5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: H5
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Infineon 223
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AUD 2.7513
Multiples of: 1

      250 W   Trenchstop 5    H5
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First...5657585960...

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