IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXBH20N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 272
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AUD 109.67
Multiples of: 1

Single3 kV2.7 V+/- 20 V50 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
STGFW40H65FB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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STMicroelectronics 271
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AUD 2.2157
Multiples of: 1

Single650 V2 V 80 A250 nA  TO - 3PF SiThrough Hole62.5 W  600 - 650V Igbts
IKZA50N65RH5XKSA1


IGBT Trench Field Stop 650V 80A 305W Through Hole PG-TO247-4-3
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Infineon 270
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AUD 5.5314
Multiples of: 1

        TO - 247 - 4Tube     Trenchstop 5
IXXH60N65B4


IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
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IXYS 270
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AUD 6.2386
Multiples of: 1

Single650 V1.7 V20 V116 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh60n65
FGH12040WD_F155


IGBT Transistors 1200V 40A FS2 Trench IGBT
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ON Semiconductor 269
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AUD 5.7589
Multiples of: 1

         BulkSi    Fgh12040wd_F155
RGTH60TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 268
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AUD 3.7108
Multiples of: 1

 650 V1.6 V+/- 30 V58 A+/- 200 nA   TubeSiThrough Hole194 W- 40 C+ 175 CRgth60ts65
IXBT12N300HV


IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
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IXYS 268
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AUD 63.3129
Multiples of: 1

         Tube      
IKW15N120H3


Transistor: IGBT; 1200V; 30A; 217W; TO247-3; Series: H3
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Infineon 258
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AUD 2.86
Multiples of: 1

      217 W   Trenchstop 3    H3
IHW40N65R6


TO-247-3 IGBTs ROHS
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Infineon 213
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AUD 2.5276
Multiples of: 1

                
STGW30M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 171
Ships to you
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AUD 1.9643
Multiples of: 1

Single650 V1.55 V+/- 20 V60 A+/- 250 nA  TO - 247 - 3 SiThrough Hole258 W- 55 C+ 175 CStgw30m65df2
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First...5657585960...

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