IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXBH20N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 275
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AUD 52.154
Multiples of: 1

Single3 kV2.7 V+/- 20 V50 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
STGWT30H65FB


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 274
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AUD 2.3313
Multiples of: 1

Single650 V1.75 V+/- 20 V30 A250 nA260 W TO - 3PTubeSiThrough Hole260 W- 55 C+ 175 CStgwt30h65fb
Hot RGS80TSX2HRC11


IGBT Transistors 1200V 40A FIELD STOP TRENCH
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ROHM 273
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AUD 4.1393
Multiples of: 1

         Tube      
IXyH100N65C3


Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
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IXYS 273
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AUD 18.6179
Multiples of: 1

      830 W   Genx3, Planar, Xpt     
IXYX120N120C3


IGBT Transistors IGBT XPT-GENX3
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IXYS 273
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AUD 39.6164
Multiples of: 1

        TO - 247PLUS - 3TubeSiThrough Hole   Planar
IXXK110N65B4H1


IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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IXYS 271
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AUD 26.9582
Multiples of: 1

Single650 V1.75 V20 V240 A100 nA  TO - 264 - 3TubeSiThrough Hole880 W- 55 C+ 175 CIxxk110n65
IXXH60N65B4


IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
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IXYS 270
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AUD 5.2045
Multiples of: 1

Single650 V1.7 V20 V116 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh60n65
FGH12040WD_F155


IGBT Transistors 1200V 40A FS2 Trench IGBT
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ON Semiconductor 269
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AUD 6.32
Multiples of: 1

         BulkSi    Fgh12040wd_F155
RGTH60TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 268
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AUD 3.7108
Multiples of: 1

 650 V1.6 V+/- 30 V58 A+/- 200 nA   TubeSiThrough Hole194 W- 40 C+ 175 CRgth60ts65
IKFW60N65ES5XKSA1


IGBT Trench Field Stop 650V 77A 138W Through Hole PG-HSIP247-3-2
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Infineon 266
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AUD 8.3508
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
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First...5657585960...

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