IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB3NC120HDT4


IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
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STMicroelectronics 234
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AUD 1.869
Multiples of: 1

 1200 V2.3 V20 V14 A100 nA75 W D2PAKReelSiSmd/Smt75 W  Stgb3nc120hd
IXYH40N65C3H1


IGBT Transistors 650V/80A XPT Copacked TO-247
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IXYS 234
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AUD 12.8229
Multiples of: 1

Single650 V1.85 V30 V80 A100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 175 CIxyh40n65
IKW40N65ET7


TO-247-3 IGBTs ROHS
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Infineon 233
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AUD 3.9653
Multiples of: 1

                
IKFW50N60DH3XKSA1


Transistor: IGBT; 600V; 44A; 106W; PG-TO247-3-AI
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Infineon 232
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AUD 1.893
Multiples of: 1

      106 W   Trenchstop     
NGTB35N65FL2WG


ON Semiconductor IGBT Transistors 650V35A FAST IGBT FSII T
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ON Semiconductor 232
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AUD 4.7541
Multiples of: 240

Single650 V2.2 V20 V70 A200 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 175 C 
IXGH50N90B2D1


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS 232
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AUD 14.72
Multiples of: 1

Single900 V2.2 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole400 W- 55 C+ 150 CIxgh50n90
IXGH40N120C3D1


IGBT Transistors 75Amps 1200V
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IXYS 232
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AUD 20.1457
Multiples of: 1

 1.2 kV4.4 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole380 W- 55 C+ 150 CIxgh40n120
IXYH82N120C3


IGBT Transistors XPT IGBT C3-Class 1200V/160A
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IXYS 232
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AUD 49.0614
Multiples of: 30

Single1200 V2.75 V30 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole1040 W- 55 C+ 150 CIxyh82n120
IGW75N60H3


Transistor: IGBT; 600V; 75A; 428W; TO247-3
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Infineon 230
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AUD 6.67
Multiples of: 1

      428 W         
IXBX50N360HV


IGBT Transistors 3600V/125A Reverse Conducting IGBT
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IXYS 230
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AUD 210.289
Multiples of: 1

        TO - 247 - PLUS - HV - 3TubeSiThrough Hole   Very High Voltage
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First...5657585960...

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