IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AUIRG4PC40S-E


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 266
Ships to you
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AUD 10.1299
Multiples of: 1

Single600 V1.32 V+/- 20 V60 A+/- 100 nA Aec - Q101TO - 247AD - 3TubeSiThrough Hole160 W- 55 C+ 150 C 
IXYH40N120B3D1


IGBT Transistors IGBT XPT-GENX3
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IXYS 265
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AUD 11.9778
Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole   Planar
IXGK400N30A3


IGBT Transistors 400 Amps 300V
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IXYS 265
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AUD 42.0794
Multiples of: 1

Single300 V1.15 V20 V400 A400 nA  TO - 264 - 3TubeSiThrough Hole1 kW- 55 C+ 150 CIxgk400n30
IXGN400N60A3


IGBT Transistors 400 Amps 600V
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IXYS 265
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AUD 81.6794
Multiples of: 1

Single600 V1.25 V20 V400 A400 nA  SOT - 227BTubeSiSmd/Smt830 W- 55 C+ 150 CIxgn400n60
FGHL50T65SQ


IGBT Transistors FS4TIGBT 50A 650V
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ON Semiconductor 264
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AUD 3.5444
Multiples of: 1

Single650 V1.6 V20 V100 A400 nA  TO - 247 - 3Tube Through Hole268 W- 55 C+ 175 C 
IGZ100N65H5XKSA1


Transistor: IGBT; 650V; 100A; 536W; TO247-4; Series: H5
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Infineon 263
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AUD 6.8563
Multiples of: 1

      536 W   Trenchstop 5    H5
AOK60B65H2AL


Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ
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Alpha & Omega 261
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AUD 4.0062
Multiples of: 1

  1.95 V   166 W         
IXXH100N60B3


IGBT Transistors XPT IGBT B3-Class 600V/210Amp
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IXYS 261
Ships to you
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AUD 13.5317
Multiples of: 1

 600 V1.8 V20 V210 A100 nA  TO - 247ADTubeSiThrough Hole830 W- 55 C+ 150 CIxxh100n60
IXYB82N120C3H1


IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
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IXYS 261
Ships to you
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AUD 31.5333
Multiples of: 1

Single1200 V2.75 V30 V164 A100 nA  TO - 264 - 3TubeSiThrough Hole1040 W- 55 C+ 150 CIxyb82n120
IXBX25N250


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 261
Ships to you
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AUD 51.8921
Multiples of: 1

Single2.5 kV3.3 V20 V55 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CVery High Voltage
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First...5657585960...

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