IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6162636465...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKFW75N65ES5XKSA1


IGBT Trench Field Stop 650V 80A 148W Through Hole PG-HSIP247-3-2
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Infineon 215
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AUD 6.2333
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
IXYH50N120C3


IGBT Transistors XPT IGBT C3-Class 1200V/105A
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IXYS 215
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AUD 11.1746
Multiples of: 1

Single1200 V2.5 V30 V105 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 150 CIxyh50n120
IXGH24N170


IGBT Transistors 50 Amps 1700V 3.3 V Rds
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IXYS 214
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AUD 17.7313
Multiples of: 1

Single1.7 kV2.5 V20 V50 A100 nA  TO - 247AD - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh24n170
STGW30V60DF


IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 213
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AUD 2.6769
Multiples of: 1

Single600 V2.35 V20 V60 A250 nA  TO - 247TubeSiThrough Hole258 W- 55 C+ 175 CStgw30v60df
APT30GS60BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi
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Microchip 213
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AUD 11.3354
Multiples of: 1

         TubeSi     
FGY100T65SCDT


IGBT Transistors FS3TIGBT TO247 100A 650V
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ON Semiconductor 213
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AUD 11.4714
Multiples of: 1

Single650 V1.5 V25 V200 A400 nA  TO - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
IGW50N60TFKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 50A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 212
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AUD 2.4955
Multiples of: 1

Single600 V1.5 V+/- 20 V90 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 175 CXgw50n60
STGWT60H65FB


IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
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STMicroelectronics 212
Ships to you
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AUD 2.6925
Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA375 W TO - 3PTubeSiThrough Hole375 W- 40 C+ 175 CStgwt60h65fb
IXBH24N170


IGBT Transistors BIMOSFETS 1700V 60A
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IXYS 212
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AUD 29.3224
Multiples of: 1

Single       TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh24n170
IGW08T120


Transistor: IGBT; 1200V; 8A; 70W; TO247-3
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Infineon 210
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AUD 2.3816
Multiples of: 1

      70 W         
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First...6162636465...

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