IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYY8N90C3


IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3
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IXYS 396
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AUD 2.6714
Multiples of: 1

Single900 V2.5 V20 V20 A100 nA  TO - 252 - 3TubeSiSmd/Smt - 55 C+ 175 CPlanar
IGW100N60H3


Transistor: IGBT; 600V; 100A; 714W; TO247-3; Series: H3
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Infineon 396
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AUD 5.4214
Multiples of: 1

      714 W   Trenchstop 3    H3
RGTH00TK65GC11


IGBT Trench Field Stop 650 V 35 A 72 W Through Hole TO-3PFM
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ROHM 395
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AUD 5.5157
Multiples of: 1

Single650 V1.6 V30 V35 A200 nA  TO - 3PFMTubeSiThrough Hole72 W- 40 C+ 175 C 
IKW40N120T2FKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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Infineon 394
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AUD 6.3643
Multiples of: 1

Single1200 V1.75 V+/- 20 V75 A200 nA  TO - 247 - 3TubeSiThrough Hole480 W- 40 C+ 175 CXkw40n120
STGW28IH125DF


STMicroelectronics IGBT Transistors 1250V 25A trench gate field-stop IGBT
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STMicroelectronics 391
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AUD 3.0728
Multiples of: 1

Single1.25 kV2.65 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGW40V60F


IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
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STMicroelectronics 390
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AUD 3.63
Multiples of: 1

Single600 V2.35 V+/- 20 V80 A 283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40v60f
FGPF4565


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 388
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AUD 1.7757
Multiples of: 1

 650 V1.88 V25 V170 A400 nA  TO - 220FTubeSiThrough Hole30 W- 55 C+ 150 CFgpf4565
RGTH40TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 387
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AUD 2.1524
Multiples of: 1

 650 V1.6 V+/- 30 V40 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole144 W- 40 C+ 175 CRgth40ts65
RGTV00TK65GVC11


IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
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ROHM 387
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AUD 5.9243
Multiples of: 1

Single650 V1.5 V30 V45 A200 nA  TO - 3PFMTubeSiThrough Hole94 W- 40 C+ 175 C 
IKB10N60T


Trans IGBT Chip N-CH 600V 24A 3-Pin(2+Tab) D2PAK
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Infineon 385
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AUD 0.9336
Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt110 W- 40 C+ 175 CTrenchstop Igbt
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