IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGS50TSX2DHRC11


IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial.
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ROHM 436
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AUD 14.818
Multiples of: 1

         Tube      
IXBK75N170


IGBT Transistors BIMOSFETS 1700V 200A
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IXYS 436
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AUD 82.3429
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        TO - 264 - 3TubeSiThrough Hole - 55 C+ 150 CIxbk75n170
IGP30N60H3XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 436
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AUD 2.371
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RGTH50TK65GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 434
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AUD 4.9714
Multiples of: 1

Single650 V1.6 V30 V26 A200 nA  TO - 3PFMTubeSiThrough Hole59 W- 40 C+ 175 C 
RGW50TK65DGVC11


IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
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ROHM 434
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AUD 5.207
Multiples of: 1

Single650 V1.9 V30 V30 A   TO - 3PFM - 3TubeSiThrough Hole67 W- 40 C+ 175 C 
IXGH28N60B3D1


IGBT Transistors 28 Amps 600V
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IXYS 434
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AUD 5.5
Multiples of: 1

Single600 V1.5 V 66 A+/- 100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh28n60
RGTH50TK65DGC11


IGBT Trench Field Stop 650 V 26 A 59 W Through Hole TO-3PFM
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ROHM 434
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AUD 5.5429
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Single650 V1.6 V30 V26 A200 nA  TO - 3PFMTubeSiThrough Hole59 W- 40 C+ 175 C 
RGTH80TK65DGC11


IGBT Trench Field Stop 650 V 31 A 66 W Through Hole TO-3PFM
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ROHM 434
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AUD 6
Multiples of: 1

Single650 V1.6 V30 V31 A200 nA  TO - 3PFMTubeSiThrough Hole66 W- 40 C+ 175 C 
RGTH00TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 433
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AUD 4.0615
Multiples of: 1

 650 V1.6 V+/- 30 V85 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole277 W- 40 C+ 175 CRgth00ts65
RGTH60TK65DGC11


IGBT Trench Field Stop 650 V 28 A 61 W Through Hole TO-3PFM
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ROHM 433
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AUD 5.8476
Multiples of: 1

Single650 V1.6 V30 V28 A200 nA  TO - 3PFMTubeSiThrough Hole61 W- 40 C+ 175 C 
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