IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
CRG40T60AK3HD


TO-247 IGBTs ROHS
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CRMICRO 485
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AUD 1.2771
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IKP15N65H5XKSA1


Transistor: IGBT; 650V; 15A; 105W; TO220-3; Series: H5
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Infineon 485
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AUD 1.3759
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      105 W        H5
IKA15N65F5XKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 485
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AUD 1.6348
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Single650 V1.6 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole33.3 W- 40 C+ 175 CIka15n65
IGP20N65H5


Transistor: IGBT; 650V; 21A; 63W; TO220-3; Series: H5
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Infineon 482
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AUD 1.6702
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      63 W   Trenchstop 5    H5
IKP20N65H5XKSA1


Transistor: IGBT; 650V; 20A; 125W; TO220-3; Series: H5
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Infineon 481
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AUD 3.6667
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      125 W        H5
RGTVX6TS65GC11


IGBT Transistors 650V 80A TO-247N Field Stp Trnch IGBT
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ROHM 480
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AUD 6.9493
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Single650 V1.5 V30 V144 A200 nA  TO - 247N - 3TubeSiThrough Hole404 W- 40 C+ 175 C 
STGWT30V60DF


STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 478
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AUD 2.6714
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Single600 V2.35 V20 V60 A250 nA  TO - 3PTubeSiThrough Hole258 W- 55 C+ 175 C600 - 650V Igbts
STGWF30NC60S


Transistors Bipolar - BJT 30A 600V Fast IGBT 5kHz 1.9 VCE
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STMicroelectronics 478
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AUD 3.4397
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Single 1.5 V     TO - 3PFTubeSiThrough Hole - 55 C+ 150 CStgwf30nc60s
AIKB40N65DF5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 477
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AUD 5.1294
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         Cut Tape      
IGP40N65F5XKSA1


Transistor: IGBT; 650V; 45A; 125W; TO220-3; Series: F5
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Infineon 388
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AUD 1.7635
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      125 W   Trenchstop 5    F5
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