IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW15M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 32592
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AUD 2.8891
Multiples of: 600

Single1200 V1.85 V20 V30 A250 nA  TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 C900 - 1300V Igbts
STGWT20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 463
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AUD 1.98
Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 3P - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
IXGP20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 462
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AUD 6.3643
Multiples of: 1

Single1.2 kV2.3 V20 V40 A100 nA  TO - 220AB - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgp20n120
IKB40N65ES5ATMA1


IGBT Transistors 40A 650V TRENCHSTOP 5 medium speed S5 IGBT copacked with 40A Rapid 1 diode
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Infineon 460
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AUD 3.4446
Multiples of: 1

Single650 V1.35 V20 V79 A100 nA  TO - 263 - 3 SiSmd/Smt230 W- 40 C+ 175 CTrenchstop 5
IXYT85N120A4HV


IGBT Transistors IGBT XPT GEN 4 1200V TO268HV
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IXYS 460
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AUD 28.1757
Multiples of: 1

         Tube      
IXGN72N60C3H1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A
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IXYS 459
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AUD 38.39
Multiples of: 1

 600 V2.1 V20 V78 A100 nA  SOT - 227B - 4TubeSiSmd/Smt360 W- 55 C+ 150 CIxgn72n60
STGW28IH125DF


STMicroelectronics IGBT Transistors 1250V 25A trench gate field-stop IGBT
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STMicroelectronics 452
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AUD 3.0637
Multiples of: 1

Single1.25 kV2.65 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGWT40H65FB


IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
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STMicroelectronics 450
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AUD 2.3177
Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA283 W TO - 3PTube Through Hole - 55 C+ 175 CStgwt40h65fb
STGW35NB60SD


Transistor: IGBT; 600V; 35A; 200W; TO247-3
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STMicroelectronics 448
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AUD 4.62
Multiples of: 1

      200 W         
SGT75T65SDM1P7


TO-247-3L IGBTs ROHS
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Silan 338
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AUD 3.3746
Multiples of: 1

                
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