IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW35NB60SD


Transistor: IGBT; 600V; 35A; 200W; TO247-3
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STMicroelectronics 457
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AUD 5.8492
Multiples of: 1

      200 W         
AOK20B65M2


Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
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Alpha & Omega 455
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AUD 4.8246
Multiples of: 1

  1.7 V   114 W         
STGW28IH125DF


STMicroelectronics IGBT Transistors 1250V 25A trench gate field-stop IGBT
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STMicroelectronics 452
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AUD 3.0439
Multiples of: 1

Single1.25 kV2.65 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
IGW15T120


Transistor: IGBT; 1200V; 15A; 110W; TO247-3
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Infineon 452
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AUD 3.4921
Multiples of: 1

      110 W         
STGWT40H65FB


IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
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STMicroelectronics 450
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AUD 2.3866
Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA283 W TO - 3PTube Through Hole - 55 C+ 175 CStgwt40h65fb
STGW15M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 450
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AUD 3.2343
Multiples of: 1

Single1200 V1.85 V20 V30 A250 nA  TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 C900 - 1300V Igbts
STGB10NC60KDT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics 447
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AUD 1.1654
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60kd
CRG75T65AK5HD


TO-247 IGBTs ROHS
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CRMICRO 447
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AUD 1.9146
Multiples of: 1

                
IGP30N65F5


Transistor: IGBT; 650V; 55A; 188W; TO220-3; Series: F5
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Infineon 447
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AUD 1.9475
Multiples of: 1

      188 W   Trenchstop 5    F5
IKW40N65RH5XKSA1


IGBT Trench Field Stop 650V 74A 250W Through Hole PG-TO247-3
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Infineon 447
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AUD 4.7143
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
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