IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKA15N60TXKSA1


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 2908
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AUD 1.2587
Multiples of: 1

Single600 V1.5 V+/- 20 V18.3 A100 nA  TO - 220FP - 3TubeSiThrough Hole35.7 W- 40 C+ 175 CTrenchstop Igbt
AUIRG4BC30SSTRL


International Rectifier IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT
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Infineon 484
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AUD 6.0657
Multiples of: 1

 600 V1.6 V 34 A  Aec - Q101D - PAK - 3ReelSiSmd/Smt100 W   
IXXH30N60B3D1


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
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IXYS 484
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AUD 6.2071
Multiples of: 1

 600 V1.66 V+/- 20 V60 A100 nA  TO - 247AD - 3TubeSiThrough Hole270 W- 55 C+ 175 CIxxh30n60
IKA15N65F5XKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 483
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AUD 1.5384
Multiples of: 1

Single650 V1.6 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole33.3 W- 40 C+ 175 CIka15n65
IXYH30N120C3


IGBT Transistors 1200V XPT GenX3 IGBT
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IXYS 483
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AUD 7.0871
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Single1200 V3.7 V30 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole500 W- 55 C+ 150 CIxyh30n120
IKA10N65ET6XKSA2


Transistor: IGBT; 650V; 9A; 20W; TO220FP; Series: T6
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Infineon 480
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AUD 1.6971
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      20 W   Trenchstop 6    T6
FGB3040G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor 480
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AUD 2.7657
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Single400 V1.15 V+/- 10 V41 A   TO - 263AB - 3ReelSiSmd/Smt150 W- 55 C+ 175 CFgb3040g2_F085
RGTVX6TS65GC11


IGBT Transistors 650V 80A TO-247N Field Stp Trnch IGBT
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ROHM 480
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AUD 6.9493
Multiples of: 1

Single650 V1.5 V30 V144 A200 nA  TO - 247N - 3TubeSiThrough Hole404 W- 40 C+ 175 C 
STGWA20HP65FB2


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 478
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AUD 1.65
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         Tube      
STGWT30V60DF


STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 478
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AUD 2.3257
Multiples of: 1

Single600 V2.35 V20 V60 A250 nA  TO - 3PTubeSiThrough Hole258 W- 55 C+ 175 C600 - 650V Igbts
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