IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW25N120H3FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 457
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AUD 3.7871
Multiples of: 1

Single1200 V2.05 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole326 W- 40 C+ 175 CXkw25n120
AOB10B65M1


TO-263 IGBTs ROHS
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Alpha & Omega 456
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AUD 0.2548
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IKA10N65ET6XKSA2


Transistor: IGBT; 650V; 9A; 20W; TO220FP; Series: T6
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Infineon 456
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AUD 1.6971
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      20 W   Trenchstop 6    T6
FGP20N60UFDTU


IGBT Transistors 600V, 20A Field Stop
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ON Semiconductor 455
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AUD 1.6017
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Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CFgp20n60ufd
IKW20N65ET7XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 455
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AUD 2.2471
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         Tube      
IKP08N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 454
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AUD 1.067
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Single650 V1.95 V20 V18 A100 nA  TO - 220 - 3TubeSiThrough Hole70 W- 40 C+ 175 CTrenchstop 5 H5
IXGP20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 453
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AUD 5.8771
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Single1.2 kV2.3 V20 V40 A100 nA  TO - 220AB - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgp20n120
IHW40N65R5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon 452
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AUD 2.1214
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Single650 V1.35 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole230 W- 40 C+ 175 CTrenchstop 5 Rc - H
STGWT40H65FB


IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
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STMicroelectronics 450
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AUD 2.3177
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Single650 V1.6 V+/- 20 V80 A250 nA283 W TO - 3PTube Through Hole - 55 C+ 175 CStgwt40h65fb
IHW40N65R5XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 449
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AUD 3.06
Multiples of: 1

        TO - 247 - 3TubeSi    Rc
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