IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKP10N60TXKSA1


IGBT Transistors LOW LOSS DuoPack 600V 10A
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Infineon 485
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AUD 1.4054
Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 175 CXkp10n60
IXGP20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 477
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AUD 5.3358
Multiples of: 1

Single1.2 kV2.3 V20 V40 A100 nA  TO - 220AB - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgp20n120
IXGN72N60C3H1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A
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IXYS 477
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AUD 32.6159
Multiples of: 1

 600 V2.1 V20 V78 A100 nA  SOT - 227B - 4TubeSiSmd/Smt360 W- 55 C+ 150 CIxgn72n60
IGW20N60H3


Infineon Technologies IGBT Transistors 600V HI SPEED SW IGBT
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Infineon 476
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AUD 1.4727
Multiples of: 1

Single600 V2.4 V20 V40 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole170 W- 40 C+ 175 CIgw20n60
APT25GN120SG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 476
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AUD 11.7831
Multiples of: 1

Single1.2 kV1.7 V30 V67 A600 nA  D3PAK - 3TubeSiSmd/Smt272 W- 55 C+ 150 C 
IKP30N65F5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon 472
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AUD 2.8476
Multiples of: 1

Single650 V1.6 V20 V55 A100 nA  TO - 220 - 3TubeSiThrough Hole188 W- 40 C+ 175 CTrenchstop 5 F5
SGP10N60RUFDTU


IGBT Transistors Dis Short Circuit Rated IGBT
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ON Semiconductor 471
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AUD 2.1302
Multiples of: 1

Single600 V2.2 V+/- 20 V16 A+/- 100 nA75 W TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 CSgp10n60
IKW30N65WR5XKSA1


Transistor: IGBT; 650V; 30A; 75W; TO247-3
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Infineon 470
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AUD 1.4727
Multiples of: 1

      75 W   Trenchstop 5     
IKP06N60TXKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6A
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Infineon 465
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AUD 0.7848
Multiples of: 1

Single600 V1.5 V+/- 20 V12 A100 nA  TO - 220 - 3TubeSiThrough Hole88 W- 40 C+ 175 CXkp06n60
IKA08N65F5


Transistor: IGBT; 650V; 10.8A; 31.2W; TO220FP; Series: F5
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Infineon 465
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AUD 1.5245
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      31.2 W   Trenchstop 5    F5
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