IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
Hot IHW15N120R3


Infineon Technologies IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Infineon 562
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AUD 1.7914
Multiples of: 1

Single1200 V1.7 V20 V30 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole254 W- 40 C+ 175 CIhw15n120
IXGA12N120A3


IGBT Transistors 1200V, 12A IGBT; G Series
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IXYS 562
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AUD 3.74
Multiples of: 1

Single1.2 kV2.4 V20 V22 A100 nA  TO - 263AA - 3TubeSiSmd/Smt100 W- 55 C+ 150 CIxga12n120
IXYP50N65C3


IGBT Transistors 650V/130A XPT C3-Class TO-220
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IXYS 559
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AUD 6.8043
Multiples of: 1

Single650 V1.74 V30 V130 A100 nA  TO - 220 - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxyp50n65
STGW20IH125DF


STMicroelectronics IGBT Transistors 1250V 20A trench gate field-stop IGBT
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STMicroelectronics 557
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AUD 2.2276
Multiples of: 1

Single1.25 kV2.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
IGP40N65H5XKSA1


Transistor: IGBT; 650V; 74A; 250W; TO220-3; Series: H5
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Infineon 553
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AUD 1.6186
Multiples of: 1

      250 W        H5
STGWT30H60DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 552
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AUD 2.2145
Multiples of: 1

Single600 V1.55 V20 V60 A250 nA  TO - 3PTube Through Hole260 W- 55 C+ 175 C600 - 650V Igbts
NGTB50N60S1WG


ON Semiconductor IGBT Transistors FSII 50A 600V Welding
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ON Semiconductor 552
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AUD 5.2679
Multiples of: 1

Single600 V1.8 V+/- 20 V100 A200 nA  TO - 247 - 3TubeSiThrough Hole417 W- 55 C+ 175 C 
HGTP5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor 547
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AUD 2.0881
Multiples of: 1

Single1200 V2.45 V+/- 20 V21 A+/- 250 nA167 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CHgtp5n120
IGB50N60T


Transistor: IGBT; 600V; 50A; 333W; D2PAK
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Infineon 547
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AUD 4.1254
Multiples of: 1

      333 W         
AOTF20B65M1


Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.27mJ; Eon: 0.47mJ
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Alpha & Omega 545
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AUD 3.08
Multiples of: 1

  1.7 V   18 W         
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