IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWT30H60DFB


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 582
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AUD 3.1268
Multiples of: 300

Single600 V1.55 V20 V60 A250 nA  TO - 3PTube Through Hole260 W- 55 C+ 175 C600 - 650V Igbts
STGW60H65DFB


IGBT Transistors 600V 60A trench gate field-stop IGBT
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STMicroelectronics 582
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AUD 3.631
Multiples of: 600

Single650 V1.6 V20 V80 A250 nA375 W TO - 247 - 3Tube Through Hole - 55 C+ 175 CStgw60h65
STGW30NC120HD


Transistor: IGBT; 1200V; 30A; 220W; TO247-3
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STMicroelectronics 582
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AUD 4.0952
Multiples of: 600

      220 W         
STGW30NC60WD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 582
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AUD 4.0933
Multiples of: 600

Single600 V2.1 V+/- 20 V 100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CStgw30nc60wd
STGFW30H65FB


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 581
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AUD 2.1476
Multiples of: 1

Single650 V1.55 V20 V60 A250 nA  TO - 3PFTubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
IXYP50N65C3


IGBT Transistors 650V/130A XPT C3-Class TO-220
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IXYS 581
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AUD 5.954
Multiples of: 1

Single650 V1.74 V30 V130 A100 nA  TO - 220 - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxyp50n65
FGY160T65SPD_F085


IGBT Transistors 650V Field Stop Gen3 Trench IGBT
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ON Semiconductor 580
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AUD 14.6841
Multiples of: 1

Single650 V1.6 V+/- 20 V240 A+/- 250 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy160t65s_F085
RGW80TS65GC11


IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT
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ROHM 577
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AUD 4.4585
Multiples of: 1

Single650 V1.5 V30 V78 A200 nA  TO - 247N - 3TubeSiThrough Hole214 W- 40 C+ 175 C 
STGW30H60DFB


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 574
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AUD 1.6871
Multiples of: 592

Single600 V1.55 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
IKW50N60H3


IGBT Transistors HIGH SPEED SWITCHING
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Infineon 573
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AUD 3.1277
Multiples of: 1

Single600 V2.25 V20 V100 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 175 CIkw50n60
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