IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW50N65H5FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 673
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AUD 2.2
Multiples of: 1

Single650 V1.65 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIgw50n65
RGS80TS65HRC11


IGBT Trench Field Stop 650 V 73 A 272 W Through Hole TO-247N
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ROHM 672
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AUD 5.5328
Multiples of: 1

Single650 V1.65 V30 V73 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole272 W- 40 C+ 175 C 
SGB02N60


IGBT Transistors FAST IGBT NPT TECH 600V 2A
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Infineon 671
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AUD 1.4519
Multiples of: 1

Single600 V +/- 20 V    TO - 263 - 3ReelSiSmd/Smt - 55 C+ 150 CSgb02n60
IKW30N60H3FKSA1


Transistor: IGBT; 600V; 30A; 94W; TO247-3; Series: H3
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Infineon 670
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AUD 1.7731
Multiples of: 1

      94 W   Trenchstop 3    H3
IRGB4620DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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Infineon 670
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AUD 3.055
Multiples of: 1

Single600 V1.97 V+/- 20 V32 A100 nA140 W TO - 220AC - 3BulkSiThrough Hole140 W- 40 C+ 175 CTrenchstop
IGW40T120FKSA1


Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247
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Infineon 669
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AUD 6.5065
Multiples of: 1

Single               
HGTP5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor 668
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AUD 2.3051
Multiples of: 1

Single1200 V2.45 V+/- 20 V21 A+/- 250 nA167 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CHgtp5n120
IKW75N65EH5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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Infineon 668
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AUD 4.0785
Multiples of: 1

Single650 V1.65 V20 V90 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
IXEL40N400


IGBT Transistors 4000V 425ns IGBT
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IXYS 667
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AUD 174.6905
Multiples of: 1

Single4000 V3 V20 V    Isoplus264 - 3TubeSiSmd/Smt - 40 C+ 125 CIxel40n400
AIKB30N65DH5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 663
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AUD 3.8063
Multiples of: 1

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