IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGA12N120A3


IGBT Transistors 1200V, 12A IGBT; G Series
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 733
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AUD 3.6841
Multiples of: 1

Single1.2 kV2.4 V20 V22 A100 nA  TO - 263AA - 3TubeSiSmd/Smt100 W- 55 C+ 150 CIxga12n120
STGP10NB60SD


IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH
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STMicroelectronics 731
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AUD 1.5891
Multiples of: 1

Single600 V +/- 20 V  3.5 W TO - 220 - 3Tube Through Hole - 65 C+ 150 CStgp10nb60sd
IRG4BC30FD1PBF


IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode
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Infineon 727
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AUD 3.2416
Multiples of: 1

Single600 V1.8 V+/- 20 V31 A 100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C  
IXGT6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS 727
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AUD 13.2541
Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt6n170
ISL9V3040S3ST-F085C


IGBT Transistors ECOSPARK1 IGN-IGBT
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ON Semiconductor 712
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AUD 1.5118
Multiples of: 735

Single400 V1.25 V10 V21 A  Aec - Q101DPAK - 3Cut TapeSiSmd/Smt150 W- 55 C+ 175 C 
STGB20H60DF


IGBT Transistors 600 V, 20 A high speed trench gate field-stop IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 710
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AUD 1.3623
Multiples of: 1

          Si    Stgb20h60df
FGB5N60UNDF


IGBT Transistors 600V 5A NPT IGBT
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ON Semiconductor 708
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AUD 1.6655
Multiples of: 1

Single600 V2.4 V+/- 20 V10 A+/- 10 nA73.5 W TO - 263AB (D2 PAK)TubeSiSmd/Smt73.5 W- 55 C+ 150 CFgb5n60undf
NCE30TD60BD


IGBTs TO-263 RoHS
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NCE Power 703
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AUD 1.4981
Multiples of: 1

                
IKW40N65F5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: F5
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Infineon 701
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AUD 2.3313
Multiples of: 1

      250 W   Trenchstop 5    F5
RGPR20NS43HRTL


IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 697
Ships to you
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AUD 1.3149
Multiples of: 1

Single460 V1.6 V10 V20 A0.6 mA Aec - Q101TO - 263 - 3Cut Tape Smd/Smt107 W- 40 C+ 175 C 
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