IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
CRG15T120BNR3S


TO-3P IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

CRMICRO 798
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AUD 0.9885
Multiples of: 1

                
AOTF15B60D


Transistor: IGBT; 600V; 15A; 25W; TO220F; Eoff: 0.11mJ; Eon: 0.42mJ
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Alpha & Omega 795
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AUD 3.0444
Multiples of: 1

  1.6 V   25 W         
STGFW30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics 792
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AUD 2.0429
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Single600 V2.3 V20 V60 A250 nA  TO - 3PF - 3TubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
STGB30H60DLFB


IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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STMicroelectronics 786
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AUD 4.0857
Multiples of: 1

Single600 V1.55 V+/- 20 V60 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt260 W- 55 C+ 175 C600 - 650V Igbts
RGT8TM65DGC9


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 785
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AUD 1.5958
Multiples of: 1

Single650 V1.65 V30 V5 A200 nA  TO - 220 - 3TubeSiThrough Hole16 W- 40 C+ 175 C 
RGT50NS65DGTL


IGBTs Trench Field Stop 650V 25A LPDS RoHS
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ROHM 778
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AUD 2.6604
Multiples of: 1

                
IRGP4063-EPBF


IGBT Transistors 600V 96A
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Infineon 776
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AUD 6.2996
Multiples of: 95

Single600 V2.14 V+/- 20 V96 A100 nA330 W TO - 247TubeSiThrough Hole330 W- 55 C+ 175 C 
NGB8207ABNT4G


ON Semiconductor IGBT Transistors
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ON Semiconductor 776
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AUD 1.219
Multiples of: 1

 365 V 15 V20 A 165 W D2PAKReelSiSmd/Smt165 W- 55 C+ 175 CNgb8207ab
IGB30N60H3


Transistor: IGBT; 600V; 30A; 187W; D2PAK
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Infineon 776
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AUD 2.3183
Multiples of: 1

      187 W         
AFGB40T65SQDN


IGBT Transistors 650V40A FS4 IGBT
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ON Semiconductor 776
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AUD 5.1352
Multiples of: 1

Single650 V1.6 V20 V80 A400 nA Aec - Q101TO - 263 - 3Cut TapeSiSmd/Smt238 W- 55 C+ 175 C 
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