IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AIKB30N65DF5ATMA1


IGBT Transistors DISCRETE SWITCHES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 767
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AUD 4.1619
Multiples of: 1

         Cut Tape      
Hot IKW20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon 759
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AUD 2.6798
Multiples of: 1

Single600 V1.5 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole166 W- 40 C+ 150 CIkw20n60
IKW40N65ET7XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 740
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AUD 3.1743
Multiples of: 1

         Tube      
FGH75T65UPD_F085


IGBT Transistors 650V/75A FS TRENCH IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 735
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AUD 8.6743
Multiples of: 1

Single650 V2.21 V+/- 20 V150 A400 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CFgh75t65
STGB7H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed
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STMicroelectronics 734
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AUD 0.7999
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          Si    Stgb7h60df
IKB15N60TATMA1


IGBT Transistors INDUSTRY 14
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Infineon 734
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AUD 3.92
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STGP10NB60SD


IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH
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STMicroelectronics 731
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AUD 1.4756
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Single600 V +/- 20 V  3.5 W TO - 220 - 3Tube Through Hole - 65 C+ 150 CStgp10nb60sd
RGT16TM65DGC9


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 727
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AUD 1.9486
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Single650 V1.65 V30 V9 A200 nA  TO - 220 - 3TubeSiThrough Hole22 W- 40 C+ 175 C 
IRG4BC30FD1PBF


IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode
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Infineon 727
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between Fri. 25 Sep to Thu. 01 Oct Calender.png

AUD 3.1027
Multiples of: 1

Single600 V1.8 V+/- 20 V31 A 100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C  
IKB06N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6A
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.7558
Multiples of: 1

Single600 V1.5 V+/- 20 V12 A100 nA  TO - 263 - 3ReelSiSmd/Smt88 W- 40 C+ 150 CIkb06n60
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