IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGFW30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 792
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AUD 1.9486
Multiples of: 1

Single600 V2.3 V20 V60 A250 nA  TO - 3PF - 3TubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
FGL60N100BNTDTU


IGBT Transistors HIGH_POWER
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ON Semiconductor 792
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AUD 16.0638
Multiples of: 1

Single1000 V1.5 V+/- 25 V60 A+/- 500 nA180 W TO - 264 - 3TubeSiThrough Hole180 W- 55 C+ 150 CFgl60n100bntdtu
FGP20N60UFDTU


IGBT Transistors 600V, 20A Field Stop
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 788
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AUD 1.8465
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CFgp20n60ufd
STGB30H60DLFB


IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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STMicroelectronics 786
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AUD 2.4514
Multiples of: 1

Single600 V1.55 V+/- 20 V60 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt260 W- 55 C+ 175 C600 - 650V Igbts
RGT8TM65DGC9


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 785
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AUD 1.5958
Multiples of: 1

Single650 V1.65 V30 V5 A200 nA  TO - 220 - 3TubeSiThrough Hole16 W- 40 C+ 175 C 
FGD2736G3-F085


IGBT Transistors ECOSPARK 2 IGNITION IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 784
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AUD 1.2477
Multiples of: 1

Single360 V1.45 V+/- 14 V21 A25 uA  TO - 252 - 3Cut Tape Smd/Smt150 W- 40 C+ 175 C 
STGB19NC60HDT4


STMicroelectronics IGBT Transistors N Ch 600V 19A
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STMicroelectronics 779
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AUD 2.7378
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60hd
RGT50NS65DGTL


IGBTs Trench Field Stop 650V 25A LPDS RoHS
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ROHM 778
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AUD 2.6243
Multiples of: 1

                
IRGP4063-EPBF


IGBT Transistors 600V 96A
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Infineon 776
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AUD 5.692
Multiples of: 1

Single600 V2.14 V+/- 20 V96 A100 nA330 W TO - 247TubeSiThrough Hole330 W- 55 C+ 175 C 
FGH40N60SFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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ON Semiconductor 208
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AUD 2.6406
Multiples of: 1

      116 W         
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