IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AOTF10B60D


Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eon:0.35mJ; Eoff:0.16mJ
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega 867
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AUD 2.2667
Multiples of: 1

  1.53 V   16.7 W         
STGB40H65FB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics 867
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AUD 5.5153
Multiples of: 1

Single650 V1.6 V20 V80 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt283 W- 55 C+ 175 CStgb40h65fb
STGP10NC60S


Trans IGBT Chip N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 864
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AUD 2.092
Multiples of: 1

Single        Rail/Tube      
RGT30NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 861
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AUD 2.4381
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 262 - 3TubeSiThrough Hole133 W- 40 C+ 175 C 
IRGR2B60KDPBF


IGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V
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Infineon 859
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AUD 1.9278
Multiples of: 1

Single600 V1.95 V+/- 20 V6.3 A100 nA  TO - 252 - 3TubeSiSmd/Smt35 W- 55 C+ 150 CRc
RGT16NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 857
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AUD 1.9108
Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt94 W- 40 C+ 175 C 
AUIRGPS4070D0


IGBT Transistors DISCRETES
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Infineon 854
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AUD 23.5863
Multiples of: 29

Single600 V1.7 V20 V240 A100 nA Aec - Q101SUPER - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
IKFW40N60DH3EXKSA1


Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
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Infineon 845
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AUD 5.0381
Multiples of: 1

      81 W   Trenchstop     
FGP10N60UNDF


IGBT Transistors 600V 10A NPT IGBT
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ON Semiconductor 844
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AUD 1.4283
Multiples of: 1

Single600 V2.3 V+/- 20 V20 A+/- 10 uA139 W TO - 220TubeSiThrough Hole139 W- 55 C+ 150 CFgp10n60undf
IKZA50N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 274W Through Hole PG-TO247-4-3
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Infineon 842
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AUD 9.8192
Multiples of: 1

        TO - 247 - 4Tube     Trenchstop 5
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