IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH60T65SHD_F155


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 823
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AUD 4.2114
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         BulkSi    Fgh60t65shd
CRG40T60AK3SD


TO-247 IGBTs ROHS
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CRMICRO 816
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AUD 2.2672
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IKB20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon 815
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AUD 2.3
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Single600 V1.5 V+/- 20 V41 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt166 W- 40 C+ 175 CTrenchstop Igbt
IKW75N65ET7XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 808
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AUD 4.4943
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         Tube      
RGTH00TS65GC13


IGBT Transistors IGBT
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ROHM 805
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AUD 4.9657
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Single650 V2.1 V30 V85 A   TO - 247GE - 3TubeSiThrough Hole277 W- 40 C+ 175 C 
STGFW30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics 792
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AUD 1.9171
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Single600 V2.3 V20 V60 A250 nA  TO - 3PF - 3TubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
MLG30T65FDL-F


IGBT 650V 80A 300W Through Hole TO-220F
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Minos 791
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AUD 1.0796
Multiples of: 1

            300 W   
STGB30H60DLFB


IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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STMicroelectronics 786
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AUD 2.4043
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Single600 V1.55 V+/- 20 V60 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt260 W- 55 C+ 175 C600 - 650V Igbts
RGT8TM65DGC9


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 785
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AUD 1.5958
Multiples of: 1

Single650 V1.65 V30 V5 A200 nA  TO - 220 - 3TubeSiThrough Hole16 W- 40 C+ 175 C 
FGA40N65SMD


IGBT Transistors 650V, 40A Field Stop IGBT
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ON Semiconductor 536
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AUD 2.4352
Multiples of: 1

 650 V2.5 V20 V80 A400 nA349 W TO - 3PNTubeSiThrough Hole349 W  Fga40n65smd
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