IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGT6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS 1366
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AUD 17.0814
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Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt6n170
RGT16NS65DGC9


IGBT Trench Field Stop 650 V 16 A 94 W Through Hole TO-262
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ROHM 834
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AUD 1.9957
Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 262 - 3TubeSiThrough Hole94 W- 40 C+ 175 C 
KGF75N65KDF-U/H


TO-247 IGBTs ROHS
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KEC 834
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AUD 2.1345
Multiples of: 1

                
FGH75T65UPD_F085


IGBT Transistors 650V/75A FS TRENCH IGBT
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ON Semiconductor 832
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AUD 8.4229
Multiples of: 1

Single650 V2.21 V+/- 20 V150 A400 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CFgh75t65
RGTV60TK65GVC11


IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
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ROHM 827
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AUD 5.0866
Multiples of: 1

Single650 V1.5 V30 V33 A200 nA  TO - 3PFMTubeSiThrough Hole76 W- 40 C+ 175 C 
FGH60T65SHD_F155


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 823
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AUD 4.2114
Multiples of: 1

         BulkSi    Fgh60t65shd
IKQ120N60TXKSA1


Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
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Infineon 817
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AUD 10.6857
Multiples of: 1

      833 W   Trenchstop     
IKB20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon 815
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AUD 2.3
Multiples of: 1

Single600 V1.5 V+/- 20 V41 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt166 W- 40 C+ 175 CTrenchstop Igbt
RGTH00TS65GC13


IGBT Transistors IGBT
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ROHM 805
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AUD 4.8464
Multiples of: 1

Single650 V2.1 V30 V85 A   TO - 247GE - 3TubeSiThrough Hole277 W- 40 C+ 175 C 
RGT16TM65DGC9


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 727
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AUD 1.8071
Multiples of: 1

Single650 V1.65 V30 V9 A200 nA  TO - 220 - 3TubeSiThrough Hole22 W- 40 C+ 175 C 
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