IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
G40T120AK3S


278W 238ns 77ns +150℃@(Tj) 80A 1.2kV 6V@250uA 208nC@40A,15V 1.9V@10A,15V 1.5mJ 2.8mJ 1mA@1.2kV 6.618nF@25V 2.4V@20A 160A TO-247 IGBTs ROHS
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CRMICRO 899
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between Wed. 26 Nov to Mon. 01 Dec
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AUD 3.7603

Multiples of: 1

                
STGB19NC60HDT4


STMicroelectronics IGBT Transistors N Ch 600V 19A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 892
Ships to you
between Wed. 26 Nov to Mon. 01 Dec
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AUD 2.9571

Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60hd
RGT50NS65DGC9


IGBT Trench Field Stop 650 V 48 A 194 W Through Hole TO-262
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ROHM 888
Ships to you
between Tue. 18 Nov to Thu. 20 Nov
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AUD 2.99

Multiples of: 1

Single650 V1.65 V30 V48 A200 nA  TO - 262 - 3TubeSiThrough Hole194 W- 40 C+ 175 C 
STGP30NC60W


IGBT Transistors N-channel MOSFET
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STMicroelectronics 881
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between Wed. 12 Nov to Tue. 18 Nov
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AUD 2.7795

Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CStgp30nc60w
IGP10N60T


Transistor: IGBT; 600V; 18A; 110W; TO220-3
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Infineon 877
Ships to you
between Tue. 18 Nov to Thu. 20 Nov
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AUD 0.749

Multiples of: 1

      110 W         
IKW50N65RH5XKSA1


IGBT Trench Field Stop 650V 80A 305W Through Hole PG-TO247-3
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Infineon 874
Ships to you
between Tue. 18 Nov to Thu. 20 Nov
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AUD 5.9269

Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
FGL40N120ANTU


Fairchild Semiconductor IGBT Transistors 1200V NPT IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 873
Ships to you
between Wed. 12 Nov to Tue. 18 Nov
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AUD 17.4107

Multiples of: 1

Single1200 V +/- 25 V    TO - 264 - 3TubeSiThrough Hole - 55 C+ 150 CFgl40n120an
IGU04N60TAKMA1


IGBT Transistors Infineons TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
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Infineon 871
Ships to you
between Wed. 12 Nov to Tue. 18 Nov
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AUD 1.1555

Multiples of: 1

        TO - 251 - 3TubeSi    Trenchstop Igbt
IGW30N60H3


Transistor: IGBT; 600V; 30A; 187W; TO247-3
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Infineon 847
Ships to you
between Tue. 18 Nov to Thu. 20 Nov
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AUD 1.9381

Multiples of: 1

      187 W         
IKA06N60TXKSA1


Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
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Infineon 485
Ships to you
between Wed. 12 Nov to Tue. 18 Nov
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AUD 0.9106

Multiples of: 500

      28 W   Trenchstop     
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