IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP10NC60S


Trans IGBT Chip N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 864
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AUD 1.9108
Multiples of: 1

Single        Rail/Tube      
RGT30NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 861
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AUD 2.4381
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 262 - 3TubeSiThrough Hole133 W- 40 C+ 175 C 
IRGR2B60KDPBF


IGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V
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Infineon 859
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AUD 1.1954
Multiples of: 1

Single600 V1.95 V+/- 20 V6.3 A100 nA  TO - 252 - 3TubeSiSmd/Smt35 W- 55 C+ 150 CRc
AOT15B60D


Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eon:0.42mJ; Eoff:0.11mJ
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Alpha & Omega 853
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AUD 2.8
Multiples of: 1

  1.6 V   83.3 W         
KGF75N60KDB


TO-247-3 IGBTs ROHS
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KEC 847
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AUD 3.0329
Multiples of: 1

                
STGF20H65DFB2


IGBT Transistors Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT
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STMicroelectronics 846
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AUD 1.1267
Multiples of: 1

         Tube      
RGT16NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 836
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AUD 1.8229
Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt94 W- 40 C+ 175 C 
IGB50N65S5ATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 795
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AUD 2.12
Multiples of: 1

Single650 V1.35 V20 V80 A50 uA  TO - 263 - 3Cut Tape Smd/Smt270 W- 40 C+ 175 CTrenchstopâ ¢5
STGW40V60DF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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STMicroelectronics 705
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AUD 4.24
Multiples of: 1

Single600 V2.35 V20 V80 A250 nA  TO - 247Tube Through Hole283 W- 55 C+ 175 C600 - 650V Igbts
STGB10NB37LZT4


STMicroelectronics IGBT Transistors 10 A - 410 V Int Clamped IGBT
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STMicroelectronics 662
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AUD 1.2886
Multiples of: 1

Single440 V 16 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 65 C+ 150 CStgb10nb37lz
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