IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGL60N100BNTDTU


IGBT Transistors HIGH_POWER
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ON Semiconductor 972
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AUD 15.9523
Multiples of: 1

Single1000 V1.5 V+/- 25 V60 A+/- 500 nA180 W TO - 264 - 3TubeSiThrough Hole180 W- 55 C+ 150 CFgl60n100bntdtu
DGTD65T15H2TF


IGBT Transistors IGBT 600V-X
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Diodes Incorporated 971
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AUD 1.5348
Multiples of: 1

Single650 V1.65 V 30 A+/- 100 nA  I TO - 220AB - 3  Through Hole48 W- 40 C+ 175 C 
IGP10N60TXKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 10A
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Infineon 970
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AUD 0.749
Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 175 CTrenchstop Igbt
IGB20N60H3


Transistor: IGBT; 600V; 20A; 170W; D2PAK
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Infineon 970
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AUD 1.0546
Multiples of: 1

      170 W         
STGP7NC60HD


Transistor: IGBT; 600V; 14A; 80W; TO220AB
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STMicroelectronics 970
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AUD 1.2516
Multiples of: 1000

      80 W         
STGF15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics 970
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AUD 1.1667
Multiples of: 1000

Single600 V1.6 V+/- 20 V30 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf15h60df
STGF20M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
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STMicroelectronics 970
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AUD 1.5905
Multiples of: 1000

Single650 V1.55 V+/- 20 V40 A250 uA  TO - 220FP - 3 SiThrough Hole32.6 W- 55 C+ 175 CStgf20m65df2
AOT20B65M1


Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ
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Alpha & Omega 970
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AUD 2
Multiples of: 1

  1.7 V   114 W         
CRG60T60AK3HD


TO-247 IGBTs ROHS
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CRMICRO 970
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AUD 2.0087
Multiples of: 1

                
STGB10NC60HDT4


IGBT Transistors N Ch 10A 600V
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STMicroelectronics 970
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AUD 2.4889
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60hd
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