IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGIB6B60KDPBF


International Rectifier IGBT Transistors 600V Low-Vceon
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 2335
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AUD 2.6339
Multiples of: 1

Single600 V1.8 V+/- 20 V11 A100 nA  TO - 220FP - 3TubeSiThrough Hole38 W- 55 C+ 175 CRc
RGT40NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 970
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AUD 3.4523
Multiples of: 1

Single650 V1.65 V30 V40 A200 nA  TO - 262 - 3TubeSiThrough Hole161 W- 40 C+ 175 C 
IRGB15B60KDPBF


Transistor: IGBT; 600V; 31A; 139W; TO220AB
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Infineon 970
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AUD 3.4598
Multiples of: 1

Single600 V2.2 V+/- 20 V31 A 139 W TO - 220 - 3TubeSiThrough Hole139 W- 55 C  
RGT40NS65DGTL


ROHM Semiconductor IGBT Transistors
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ROHM 969
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AUD 1.9957
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 650 V1.65 V+/- 30 V40 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt161 W- 40 C+ 175 CRgt40ns65d
IGB50N65H5ATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 965
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AUD 2.9571
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Single650 V1.65 V20 V80 A100 nA  TO - 263 - 3Cut Tape Smd/Smt270 W- 40 C+ 175 CTrenchstopâ ¢5
Hot IKW50N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 50A
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Infineon 964
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AUD 3.6126
Multiples of: 1

Single600 V1.5 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 150 CIkw50n60
AIKB30N65DH5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 962
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AUD 3.7243
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RGT8NL65DGTL


IGBT Trench Field Stop 650 V 8 A 65 W Surface Mount LPDS
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ROHM 952
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AUD 1.65
Multiples of: 1

Single650 V1.65 V30 V8 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt65 W- 40 C+ 175 C 
NCE30TD60B


TO-220 IGBTs ROHS
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NCE Power 952
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AUD 1.5249
Multiples of: 1

                
AIGB15N65F5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 950
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AUD 2.4643
Multiples of: 1

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