IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AFGB40T65SQDN


IGBT Transistors 650V40A FS4 IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 880
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AUD 4.4471
Multiples of: 1

Single650 V1.6 V20 V80 A400 nA Aec - Q101TO - 263 - 3Cut TapeSiSmd/Smt238 W- 55 C+ 175 C 
STGP30NC60W


IGBT Transistors N-channel MOSFET
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STMicroelectronics 873
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AUD 2.5016
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CStgp30nc60w
FGL40N120ANTU


Fairchild Semiconductor IGBT Transistors 1200V NPT IGBT
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ON Semiconductor 873
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AUD 16.875
Multiples of: 1

Single1200 V +/- 25 V    TO - 264 - 3TubeSiThrough Hole - 55 C+ 150 CFgl40n120an
IGP10N60T


Transistor: IGBT; 600V; 18A; 110W; TO220-3
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Infineon 872
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AUD 0.6961
Multiples of: 1

      110 W         
IKB20N65EH5ATMA1


IGBT Transistors Infineon s 650 V 20 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
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Infineon 872
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AUD 4.18
Multiples of: 1

Single650 V1.65 V20 V38 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt125 W- 40 C+ 175 C650V Trenchstop 5
IXGH16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS 872
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AUD 17.38
Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
STGP8NC60KD


IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET
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STMicroelectronics 870
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AUD 1.0266
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CStgp8nc60kd
STGB6NC60HDT4


IGBT Transistors PowerMESH TM IGBT
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STMicroelectronics 869
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AUD 1.0007
Multiples of: 1

Single600 V2.7 V+/- 20 V 100 nA80 W D2PAK - 3ReelSiSmd/Smt80 W- 55 C+ 150 CStgb6nc60hd
STGP10NC60S


Trans IGBT Chip N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube
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STMicroelectronics 864
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AUD 1.9108
Multiples of: 1

Single        Rail/Tube      
RGT30NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 861
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AUD 2.4381
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 262 - 3TubeSiThrough Hole133 W- 40 C+ 175 C 
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