IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP4262DPBF


International Rectifier IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 1042
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AUD 4.6205
Multiples of: 1

Single650 V1.7 V20 V60 A100 nA  TO - 247AC - 3TubeSiThrough Hole250 W- 40 C+ 175 C 
IKB06N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6A
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Infineon 1037
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AUD 1.0419
Multiples of: 1

Single600 V1.5 V+/- 20 V12 A100 nA  TO - 263 - 3ReelSiSmd/Smt88 W- 40 C+ 150 CIkb06n60
IXGH16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS 1025
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AUD 16.39
Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
IGB30N60T


Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 30A
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Infineon 978
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AUD 2.4278
Multiples of: 1

Single600 V1.95 V+/- 20 V60 A100 nA  TO - 263 - 3ReelSiSmd/Smt187 W- 40 C+ 150 CIgb30n60
STGF15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics 970
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AUD 0.9877
Multiples of: 1000

Single600 V1.6 V+/- 20 V30 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf15h60df
RGT8NS65DGTL


IGBT Transistors 650V 4A Field Stop Trench IGBT
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ROHM 970
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AUD 1.0675
Multiples of: 1

 650 V1.65 V+/- 30 V8 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt65 W- 40 C+ 175 CRgt8ns65d
STGF20M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 970
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AUD 1.1779
Multiples of: 1000

Single650 V1.55 V+/- 20 V40 A250 uA  TO - 220FP - 3 SiThrough Hole32.6 W- 55 C+ 175 CStgf20m65df2
RGT40NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 970
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AUD 3.4523
Multiples of: 1

Single650 V1.65 V30 V40 A200 nA  TO - 262 - 3TubeSiThrough Hole161 W- 40 C+ 175 C 
IKW30N65EL5XKSA1


Transistor: IGBT; 650V; 62A; 114W; TO247-3
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Infineon 962
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AUD 3.1743
Multiples of: 1

      114 W   Trenchstop 5     
CRG40T60AN3H


TO-3PN IGBTs ROHS
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CRMICRO 932
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AUD 1.3249
Multiples of: 1

                
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