IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGSL4062DPBF


Transistor: IGBT; 600V; 48A; 250W; TO262
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 1244
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AUD 4.361
Multiples of: 1

Single600 V1.95 V+/- 20 V48 A 250 W TO - 262TubeSiThrough Hole250 W- 55 C  
Hot IKW40N120H3


IGBT Transistors IGBT PRODUCTS
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Infineon 1239
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AUD 3.1644
Multiples of: 1

Single1200 V2.05 V+/- 20 V80 A600 nA483 W TO - 247 - 3TubeSiThrough Hole483 W- 40 C+ 175 CIkw40n120
IKW20N60H3FKSA1


Infineon Technologies IGBT Transistors 600V 20A 170W
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Infineon 1202
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AUD 1.5121
Multiples of: 1

Single600 V1.95 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole170 W- 40 C+ 175 CXkw20n60
IKW30N60TFKSA1


IGBT Transistors LOW LOSS DuoPack 600V 30A
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Infineon 1183
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AUD 2.397
Multiples of: 1

Single600 V1.9 V20 V45 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 175 CXkw30n60
FGH60N60SMD


igbts field stop 600v 120a to-247 (ac) rohs
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ON Semiconductor 1178
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AUD 3.8171
Multiples of: 1

                
CRG40T65AN5H


250W 40A 650V TO-3PN IGBTs ROHS
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CRMICRO 1167
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AUD 1.0828
Multiples of: 1

                
STGWA40M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 1164
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AUD 3.9776
Multiples of: 600

Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
BIDNW30N60H3


IGBT Transistors IGBT Discrete 600V, 30A in TO-247N
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Bourns 1151
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AUD 3.4921
Multiples of: 1

Single600 V1.65 V- 20 V , + 20 V60 A   TO - 247N - 3TubeSiThrough Hole230 W- 55 C+ 150 CBID
IKW25T120FKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 25A
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Infineon 1142
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AUD 5.5821
Multiples of: 1

Single1200 V1.7 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole190 W- 40 C+ 150 CXkw25t120
IKW40N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 958
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AUD 1.5968
Multiples of: 1

Single650 V2.1 V20 V74 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole120 W- 40 C+ 175 CTrenchstop 5 H5
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