IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGP40N65H5XKSA1


Transistor: IGBT; 650V; 74A; 250W; TO220-3; Series: H5
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Infineon 1329
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AUD 1.6867
Multiples of: 1

      250 W        H5
IRGP4790DPBF


Transistor: IGBT; 650V; 140A; 455W; TO247-3
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Infineon 1324
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AUD 9.499
Multiples of: 1

      455 W         
IXXH50N60C3D1


IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked
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IXYS 1315
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AUD 10.4063
Multiples of: 1

 600 V2.3 V20 V100 A100 nA  TO - 247ADTubeSiThrough Hole600 W- 55 C+ 150 CIxxh50n60
IXGH16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS 1309
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AUD 14.6667
Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
FGH40N120ANTU


IGBT Transistors 1200V NPT
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ON Semiconductor 1285
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AUD 8.0853
Multiples of: 1

Single1200 V +/- 25 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n120an
IRG4PSH71KPBF


IGBT Transistors 1200V UltraFast 4-20kHz
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Infineon 1264
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AUD 16.9231
Multiples of: 1

Single1.2 kV3.9 V+/- 20 V78 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
IKA15N60TXKSA1


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 1255
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AUD 1.0721
Multiples of: 1

Single600 V1.5 V+/- 20 V18.3 A100 nA  TO - 220FP - 3TubeSiThrough Hole35.7 W- 40 C+ 175 CTrenchstop Igbt
IRGSL4062DPBF


Transistor: IGBT; 600V; 48A; 250W; TO262
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Infineon 1244
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AUD 4.6379
Multiples of: 1

Single600 V1.95 V+/- 20 V48 A 250 W TO - 262TubeSiThrough Hole250 W- 55 C  
IGW40N120H3


Transistor: IGBT; 1200V; 40A; 483W; TO247-3; Series: H3
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Infineon 1210
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AUD 3.981
Multiples of: 1

      483 W   Trenchstop 3    H3
CRG40T65AN5H


250W 40A 650V TO-3PN IGBTs ROHS
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CRMICRO 1167
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AUD 1.0828
Multiples of: 1

                
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