IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40N120ANTU


IGBT Transistors 1200V NPT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1236
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AUD 6.9643
Multiples of: 1

Single1200 V +/- 25 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n120an
IRGP4790DPBF


Transistor: IGBT; 650V; 140A; 455W; TO247-3
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Infineon 1227
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AUD 8.5491
Multiples of: 1

      455 W         
IXGT16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS 1202
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AUD 25.1586
Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 268 - 3TubeSiSmd/Smt190 W- 55 C+ 150 CIxgt16n170
STGB20V60F


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 1200
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AUD 1.3656
Multiples of: 1

Single600 V1.8 V+/- 20 V40 A250 nA  D2PAKReelSiSmd/Smt167 W- 55 C+ 175 C600 - 650V Igbts
STGWA40M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 1164
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AUD 3.2636
Multiples of: 600

Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
IKW25T120FKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 25A
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Infineon 1140
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AUD 5.7357
Multiples of: 1

Single1200 V1.7 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole190 W- 40 C+ 150 CXkw25t120
IXBH16N170A


IGBT Transistors 1700V 16A
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IXYS 1120
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AUD 22.22
Multiples of: 1

Single1700 V 20 V    TO - 247 - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxbh16n170
RGT50NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 1042
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AUD 2.64
Multiples of: 1

Single650 V1.65 V30 V48 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt194 W- 40 C+ 175 C 
Hot IKW75N65ES5


IGBT Transistors Trenchstop 5 IGBT
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Infineon 732
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AUD 2.6497
Multiples of: 1

Single650 V1.75 V+/- 2080 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 S5
IKW50N65F5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 2.2377
Multiples of: 1

 650 V2.1 V20 V80 A100 nA  PG - TO - 247 - 3  Through Hole145 W   
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