IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW30N65NL5XKSA1


IGBT Transistors 650V IGBT Trenchstop 5
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 1358
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AUD 4.3377
Multiples of: 1

Single650 V1.05 V20 V85 A100 nA  TO - 247 - 3TubeSiThrough Hole227 W- 40 C+ 175 CTrenchstop 5 L5
IXYH85N120A4


IGBT Transistors IGBT XPT GEN 4 1200V TO247
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IXYS 1355
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AUD 18.8806
Multiples of: 1

         Tube      
FGD3N60LSDTM


IGBT Transistors 600V IGBT HID Application
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ON Semiconductor 1296
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AUD 0.9096
Multiples of: 1

Single600 V +/- 20 V    DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CFgd3n60
IXXH60N65B4H1


IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
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IXYS 1278
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AUD 10.8851
Multiples of: 1

Single650 V1.7 V20 V116 A100 nA  TO - 247AD - 3TubeSiThrough Hole380 W- 55 C+ 175 CIxxh60n65
IRGP4790DPBF


Transistor: IGBT; 650V; 140A; 455W; TO247-3
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Infineon 1275
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AUD 8.9319
Multiples of: 1

      455 W         
IRG4PSH71KPBF


IGBT Transistors 1200V UltraFast 4-20kHz
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Infineon 1264
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AUD 16.9231
Multiples of: 1

Single1.2 kV3.9 V+/- 20 V78 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
IRGSL4062DPBF


Transistor: IGBT; 600V; 48A; 250W; TO262
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Infineon 1244
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AUD 4.361
Multiples of: 1

Single600 V1.95 V+/- 20 V48 A 250 W TO - 262TubeSiThrough Hole250 W- 55 C  
IKB15N60T


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 1242
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AUD 1.21
Multiples of: 1

Single600 V1.5 V+/- 20 V26 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt130 W- 40 C+ 175 CTrenchstop Igbt
FGH40N120ANTU


IGBT Transistors 1200V NPT
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ON Semiconductor 1236
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AUD 7.6259
Multiples of: 1

Single1200 V +/- 25 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n120an
SGT40N60NPFDPN


IGBTs Field Stop 600V 80A TO-3P RoHS
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Silan 820
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AUD 1.3619
Multiples of: 1

                
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