IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW20NC60VD


Transistor: IGBT; 600V; 30A; 200W; TO247-3
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STMicroelectronics 3007
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AUD 2.5666
Multiples of: 1

      200 W         
Hot IKW40N120H3


IGBT Transistors IGBT PRODUCTS
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Infineon 2328
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AUD 3.8431
Multiples of: 1

Single1200 V2.05 V+/- 20 V80 A600 nA483 W TO - 247 - 3TubeSiThrough Hole483 W- 40 C+ 175 CIkw40n120
STGB20V60F


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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STMicroelectronics 1200
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AUD 1.364
Multiples of: 1

Single600 V1.8 V+/- 20 V40 A250 nA  D2PAKReelSiSmd/Smt167 W- 55 C+ 175 C600 - 650V Igbts
IXGT16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS 1178
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AUD 29.52
Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 268 - 3TubeSiSmd/Smt190 W- 55 C+ 150 CIxgt16n170
IKW50N65WR5


IGBT Transistors HOME APPLIANCES 14
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Infineon 1163
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AUD 3.8573
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IKW25T120FKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 25A
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Infineon 1115
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AUD 5.6886
Multiples of: 1

Single1200 V1.7 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole190 W- 40 C+ 150 CXkw25t120
IGW30N60H3


Transistor: IGBT; 600V; 30A; 187W; TO247-3
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Infineon 1067
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AUD 1.87
Multiples of: 1

      187 W         
IKW50N60TFKSA1


Transistor: IGBT; 600V; 80A; 333W; TO247-3
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Infineon 742
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AUD 4.7614
Multiples of: 1

      333 W   Trenchstop     
IGW40N65F5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: F5
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Infineon 184
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AUD 2.8088
Multiples of: 1

      250 W   Trenchstop 5    F5
STGWA40M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 79
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AUD 4.0224
Multiples of: 1

Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
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