IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP3NC120HD


STMicroelectronics IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar
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STMicroelectronics 1940
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AUD 1.2772
Multiples of: 1000

Single 2.2 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 C900 - 1300V Igbts
IRGR4045DTRPBF


Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
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Infineon 1940
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AUD 1.6918
Multiples of: 1

                
STGF8NC60KD


Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220FP
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STMicroelectronics 1910
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AUD 0.9801
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3 FP SiThrough Hole - 55 C+ 150 CStgf8nc60kd
IKD06N60RATMA1


Trench and Field Stop technology IGBT
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Infineon 1909
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AUD 0.4942
Multiples of: 1

Single600 V1.65 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
GT50JR22(S1WLD,E,S)


TO-3P-3 IGBT Transistors / Modules ROHS
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Toshiba 1901
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AUD 1.4516
Multiples of: 1

                
IKB30N65EH5ATMA1


IGBT Transistors Infineon s 650 V 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
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Infineon 1864
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AUD 2.1343
Multiples of: 1

Single650 V1.65 V20 V55 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt188 W- 40 C+ 175 C650V Trenchstop 5
IXEL40N400


IGBT Transistors 4000V 425ns IGBT
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IXYS 1864
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AUD 181.1881
Multiples of: 1

Single4000 V3 V20 V    Isoplus264 - 3TubeSiSmd/Smt - 40 C+ 125 CIxel40n400
IRGS4715DPBF


Transistor: IGBT; 650V; 21A; 100W; D2PAK
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Infineon 1843
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AUD 2.111
Multiples of: 1

      100 W         
IKD15N60RATMA1


IGBT Transistors IGBT w/ INTG DIODE 600V 30A
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Infineon 1843
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AUD 2.3821
Multiples of: 1

Single600 V1.65 V+/- 20 V30 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CRc
STGD10NC60KDT4


Transistor: IGBT; 600V; 10A; 62W; DPAK
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STMicroelectronics 1790
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AUD 2.0478
Multiples of: 1

      62 W         
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