IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4BC30KPBF


IGBT Transistors 600V UltraFast 8-25kHz
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 2120
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AUD 2.1067
Multiples of: 1

Single600 V2.7 V+/- 20 V28 A 100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C  
NGTB05N60R2DT4G


ON Semiconductor IGBT Transistors RC2 IGBT 5A 600V DPAK
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ON Semiconductor 2112
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AUD 0.8125
Multiples of: 1

Single600 V1.65 V+/- 20 V16 A+/- 100 nA  DPAK - 3ReelSiSmd/Smt56 W + 175 C 
AOD5B65MQ1E


52W 10A 650V TO-252(DPAK) IGBTs ROHS
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Alpha & Omega 2092
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AUD 0.5966
Multiples of: 1

                
FGH40T120SMD


Transistor: IGBT; 1.2kV; 40A; 277W; TO247
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ON Semiconductor 2087
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AUD 8.5788
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      277 W         
Hot RGT8BM65DTL


ROHM Semiconductor IGBT Transistors
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ROHM 2086
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AUD 1.6221
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 650 V1.65 V+/- 30 V8 A+/- 200 nA  TO - 252 - 3ReelSiSmd/Smt62 W- 40 C+ 175 CRgt8bm65d
IKD06N60RFATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 2024
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AUD 0.5779
Multiples of: 1

Single600 V2.2 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
STGD7NB60ST4


STMicroelectronics IGBT Transistors N-Ch 600 Volt 7 Amp
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STMicroelectronics 2019
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AUD 2.7111
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Single600 V1.6 V+/- 20 V15 A+/- 100 nA  TO - 252 - 3ReelSiSmd/Smt55 W- 65 C+ 150 CStgd7nb60s
IKD06N60RATMA1


Trench and Field Stop technology IGBT
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Infineon 2016
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AUD 0.4924
Multiples of: 1

Single600 V1.65 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
STGD14NC60KT4


STMicroelectronics IGBT Transistors N-channel MOSFET
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STMicroelectronics 1985
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AUD 1.2449
Multiples of: 1

Single600 V +/- 20 V    TO - 252 - 3ReelSiSmd/Smt - 55 C+ 150 CStgd14nc60k
IKD15N60RATMA1


IGBT Transistors IGBT w/ INTG DIODE 600V 30A
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Infineon 1984
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AUD 2.3194
Multiples of: 1

Single600 V1.65 V+/- 20 V30 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CRc
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