IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGP50N60TXKSA1


Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-220AB
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Infineon 2064
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AUD 2.5119
Multiples of: 1

Single600 V1.5 V+/- 20 V90 A100 nA  TO - 220 - 3TubeSiThrough Hole333 W- 40 C+ 175 CTrenchstop Igbt
STGW40H65FB


IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
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STMicroelectronics 2037
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AUD 2.8321
Multiples of: 600

Single650 V1.6 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65fb
STGD7NB60ST4


STMicroelectronics IGBT Transistors N-Ch 600 Volt 7 Amp
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STMicroelectronics 2019
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AUD 2.7111
Multiples of: 1

Single600 V1.6 V+/- 20 V15 A+/- 100 nA  TO - 252 - 3ReelSiSmd/Smt55 W- 65 C+ 150 CStgd7nb60s
IKD06N60RATMA1


Trench and Field Stop technology IGBT
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Infineon 2006
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AUD 0.463
Multiples of: 1

Single600 V1.65 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
FGH40T120SMD


Transistor: IGBT; 1.2kV; 40A; 277W; TO247
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ON Semiconductor 1990
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AUD 8.1461
Multiples of: 1

      277 W         
STGD14NC60KT4


STMicroelectronics IGBT Transistors N-channel MOSFET
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STMicroelectronics 1985
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AUD 1.2449
Multiples of: 1

Single600 V +/- 20 V    TO - 252 - 3ReelSiSmd/Smt - 55 C+ 150 CStgd14nc60k
IKD15N60RATMA1


IGBT Transistors IGBT w/ INTG DIODE 600V 30A
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Infineon 1984
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AUD 2.3194
Multiples of: 1

Single600 V1.65 V+/- 20 V30 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CRc
STGP3NC120HD


STMicroelectronics IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar
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STMicroelectronics 1940
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AUD 1.2576
Multiples of: 1000

Single 2.2 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 C900 - 1300V Igbts
IKB15N60T


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 1940
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AUD 1.6348
Multiples of: 1

Single600 V1.5 V+/- 20 V26 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt130 W- 40 C+ 175 CTrenchstop Igbt
IRGR4045DTRPBF


Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
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Infineon 1940
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AUD 1.6918
Multiples of: 1

                
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