IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGD18N40LZT4


IGBT Transistors EAS 180 mJ-400 V clamped IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 2425
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AUD 1.5268
Multiples of: 1

Single360 V 12 V   Aec - Q101DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgd18n40lz
STGD19N40LZ


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 2425
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AUD 1.6906
Multiples of: 2500

Single390 V1.35 V16 V 625 uA Aec - Q101DPAK - 3ReelSiSmd/Smt125 W- 55 C+ 175 C300 - 400V Igbts
AOD5B60D


IGBTs 600V 23A TO-252-2 (DPAK) RoHS
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Alpha & Omega 2403
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AUD 1.3244
Multiples of: 1

                
AOD5B65N1


Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ
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Alpha & Omega 2394
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AUD 0.9911
Multiples of: 1

  2.5 V   21 W         
STGD5H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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STMicroelectronics 2347
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AUD 1.0357
Multiples of: 1

Single600 V1.5 V+/- 20 V10 A+/- 250 nA  DPAK - 3ReelSiSmd/Smt83 W- 55 C+ 175 CStgd5h60df
IRGIB6B60KDPBF


International Rectifier IGBT Transistors 600V Low-Vceon
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Infineon 2335
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AUD 2.9266
Multiples of: 1

Single600 V1.8 V+/- 20 V11 A100 nA  TO - 220FP - 3TubeSiThrough Hole38 W- 55 C+ 175 CRc
BIDW50N65T


IGBT Transistors IGBT Discrete 650V, 50A in TO-247
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Bourns 2318
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AUD 4.9937
Multiples of: 1

Single650 V1.65 V- 20 V , + 20 V100 A   TO - 247 - 3TubeSiThrough Hole416 W- 55 C+ 150 CBID
Hot IKW50N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 50A
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Infineon 2296
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AUD 3.732
Multiples of: 1

Single600 V1.5 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 150 CIkw50n60
ISL9V3040D3ST-F085C


IGBT Transistors ECOSPARK1 IGN-IGBT TO252
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ON Semiconductor 2032
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AUD 1.2281
Multiples of: 1

         Cut Tape      
STGD10NC60KT4


IGBT Transistors IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 1.8275
Multiples of: 1

Single600 V +/- 20 V    DPAK - 3Cut TapeSiSmd/Smt - 55 C+ 150 CStgd10nc60kd
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