IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGT16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS 2823
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AUD 18.054
Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 268 - 3TubeSiSmd/Smt190 W- 55 C+ 150 CIxgt16n170
IRGB4715DPBF


Transistor: IGBT; 650V; 21A; 100W; TO220AB
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Infineon 2812
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AUD 2.1835
Multiples of: 1

      100 W         
IKP40N65H5XKSA1


Transistor: IGBT; 650V; 74A; 255W; TO220-3; Series: H5
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Infineon 2808
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AUD 2.2349
Multiples of: 1

      255 W   Trenchstop 5    H5
IXBT42N300HV


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS 2801
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AUD 69.8937
Multiples of: 1

Single3 kV2.5 V25 V104 A+/- 200 nA  TO - 268HV - 2TubeSiSmd/Smt500 W- 55 C+ 150 C 
IRGP4740DPBF


Transistor: IGBT; 650V; 60A; 250W; TO247-3
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Infineon 2727
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AUD 4.7123
Multiples of: 133

      250 W         
FGH40N60SFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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ON Semiconductor 2468
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AUD 2.7195
Multiples of: 1

      116 W         
NCE07TD60BK


IGBTs TO-252 RoHS
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NCE Power 2444
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AUD 0.5444
Multiples of: 1

                
IKD10N60RATMA1


Infineon Technologies IGBT Transistors IGBT w INTG DIODE 600V 20A
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Infineon 2425
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AUD 0.681
Multiples of: 1

Single600 V1.65 V+/- 20 V20 A100 nA  TO - 252 - 3ReelSiSmd/Smt150 W- 40 C+ 175 CIkd10n60
IKD04N60RATMA1


IGBT Transistors IGBT w/ INTG DIODE 600V 8A
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Infineon 2425
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AUD 1.042
Multiples of: 1

Single600 V1.65 V+/- 20 V8 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt75 W- 40 C+ 175 CRc
STGD5NB120SZT4


Transistor: IGBT; 1200V; 5A; 75W; DPAK
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STMicroelectronics 2425
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AUD 1.3508
Multiples of: 2500

      75 W         
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