IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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1 2345...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGS4630DPBF


Trans IGBT Chip N-CH 600V 47A 3-Pin(2+Tab) D2PAK Tube
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Infineon 21631
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AUD 3.3482
Multiples of: 1

Single        Rail/Tube      
IRG8P50N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon 7362
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AUD 11.1607
Multiples of: 1

Single1200 V1.7 V30 V80 A300 nA350 W TO - 247AC - 3TubeSiThrough Hole350 W- 40 C+ 150 C 
STGD6M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 7275
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AUD 0.7222
Multiples of: 1

Single650 V1.55 V20 V12 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt88 W- 55 C+ 175 CStgd6m65df2
BIDW20N60T


IGBT Transistors IGBT Discrete 600V, 20A in TO-247
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Bourns 6805
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AUD 3.1254
Multiples of: 1

Single600 V1.7 V- 20 V , + 20 V40 A   TO - 247 - 3TubeSiThrough Hole192 W- 55 C+ 150 CBID
IGP15N60T


Transistor: IGBT; 600V; 23A; 130W; TO220-3
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Infineon 6694
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AUD 0.8137
Multiples of: 1

      130 W         
IKD10N60RFATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 6661
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AUD 1.0982
Multiples of: 1

Single600 V2.2 V+/- 20 V20 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt150 W- 40 C+ 175 CRc
IRGB4610DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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Infineon 6547
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AUD 1.8452
Multiples of: 1

Single600 V2.14 V+/- 20 V16 A100 nA77 W TO - 220AB - 3BulkSiThrough Hole77 W- 40 C+ 175 C 
GN2470K4-G


IGBT Transistors 700V 3.5A IGBT
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Microchip 6435
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AUD 1.6537
Multiples of: 1

Single700 V +/- 20 V    TO - 252 (DPAK) - 3ReelSiSmd/Smt2.5 W- 55 C+ 150 C 
IRG7PSH54K10DPBF


IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
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Infineon 6430
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AUD 17.1131
Multiples of: 1

Single1200 V2.4 V+/- 30 V120 A200 nA520 W SUPER - 247 - 3TubeSiThrough Hole520 W- 40 C+ 150 C 
STGW39NC60VD


Transistor: IGBT; 600V; 40A; 250W; TO247-3
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STMicroelectronics 6034
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AUD 2.4392
Multiples of: 1

      250 W         
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