IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
GT50JR22(S1WLD,E,S)


TO-3P-3 IGBT Transistors / Modules ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 8594
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AUD 1.5514
Multiples of: 1

                
IKW40N65ET7XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 7564
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AUD 3.3164
Multiples of: 1

         Tube      
NGTB30N60FWG


IGBT Transistors 600V/30A IGBT NPT TO-247
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ON Semiconductor 7401
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AUD 4.5243
Multiples of: 1

Single600 V1.45 V30 V60 A100 nA167 W TO - 247TubeSiThrough Hole167 W- 55 C+ 150 CNgtb30n60fwg
IRG8P50N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon 7362
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AUD 11.1241
Multiples of: 1

Single1200 V1.7 V30 V80 A300 nA350 W TO - 247AC - 3TubeSiThrough Hole350 W- 40 C+ 150 C 
STGD6M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 7275
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AUD 0.7513
Multiples of: 1

Single650 V1.55 V20 V12 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt88 W- 55 C+ 175 CStgd6m65df2
IRGB4610DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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Infineon 6547
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AUD 1.7351
Multiples of: 1

Single600 V2.14 V+/- 20 V16 A100 nA77 W TO - 220AB - 3BulkSiThrough Hole77 W- 40 C+ 175 C 
AFGHL40T65SQD


IGBT Transistors 650V40A FS4 IGBT TO-247LL
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ON Semiconductor 6442
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AUD 4.8761
Multiples of: 1

                
GN2470K4-G


IGBT Transistors 700V 3.5A IGBT
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Microchip 6290
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AUD 1.5056
Multiples of: 1

Single700 V +/- 20 V    TO - 252 (DPAK) - 3ReelSiSmd/Smt2.5 W- 55 C+ 150 C 
IGW30N65L5XKSA1


IGBT Transistors 650V IGBT Trenchstop 5
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Infineon 6180
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AUD 2.8239
Multiples of: 1

Single650 V1.05 V20 V85 A100 nA  TO - 247 - 3TubeSiThrough Hole227 W- 40 C+ 175 CTrenchstop 5 L5
IGD06N60TATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 5422
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AUD 0.77
Multiples of: 1

Single600 V1.5 V+/- 20 V12 A100 nA  TO - 252 - 3ReelSiSmd/Smt88 W- 40 C+ 175 CIgd06n60
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