IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGSL4062DPBF


Transistor: IGBT; 600V; 48A; 250W; TO262
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Infineon 26916
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AUD 4.1741
Multiples of: 1

Single600 V1.95 V+/- 20 V48 A 250 W TO - 262TubeSiThrough Hole250 W- 55 C  
IKD10N60RF


IGBT Transistors IGBT PRODUCTS TrenchStop RC
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Infineon 8294
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AUD 1.6654
Multiples of: 1

Single600 V2.2 V+/- 20 V20 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt150 W- 40 C+ 175 CRc
ULN2001DS


IGBT SOP-8_150mil RoHS
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Mixic 8201
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AUD 0.075
Multiples of: 5

                
IRG8P40N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon 7794
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AUD 8.8839
Multiples of: 1

Single1200 V1.7 V30 V60 A200 nA305 W TO - 247AC - 3TubeSiThrough Hole305 W- 40 C+ 150 C 
IRGS15B60KPBF


IGBT Transistors 600V 15A 1.8V Welding SMPS UPS
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Infineon 7760
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AUD 2.2143
Multiples of: 1

 600 V2.2 V 31 A 208 W D2PAKTubeSiSmd/Smt208 W   
STGF10H60DF


IGBT Transistors Trench gate H series 600V 10A HiSpd
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STMicroelectronics 7750
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AUD 0.9991
Multiples of: 1

Single600 V1.5 V+/- 20 V20 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf10h60df
NGTB30N60FWG


IGBT Transistors 600V/30A IGBT NPT TO-247
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ON Semiconductor 7401
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AUD 4.3304
Multiples of: 1

Single600 V1.45 V30 V60 A100 nA167 W TO - 247TubeSiThrough Hole167 W- 55 C+ 150 CNgtb30n60fwg
IRG8P50N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon 7362
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AUD 10.0223
Multiples of: 1

Single1200 V1.7 V30 V80 A300 nA350 W TO - 247AC - 3TubeSiThrough Hole350 W- 40 C+ 150 C 
STGD6M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 7275
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AUD 0.7191
Multiples of: 1

Single650 V1.55 V20 V12 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt88 W- 55 C+ 175 CStgd6m65df2
CRG25T120BK3S


TO-247 IGBTs ROHS
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CRMICRO 6905
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AUD 2.0341
Multiples of: 1

                
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