IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW20N65ET7XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 3101
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AUD 1.9905
Multiples of: 1

         Tube      
FGY40T120SMD


IGBT Transistors 1200V 40A FS2 Trench IGBT
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ON Semiconductor 3084
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AUD 12.9022
Multiples of: 30

Single1.2 kV2 V+/- 30 V80 A+/- 400 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy40t120smd
IKW40N65F5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: F5
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Infineon 3060
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AUD 2.4794
Multiples of: 1

      250 W   Trenchstop 5    F5
IRG6B330UDPBF


International Rectifier IGBT Transistors
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Infineon 3007
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AUD 4.2659
Multiples of: 1

Single330 V1.69 V+/- 30 V70 A+/- 100 nA  TO - 220 - 3TubeSiThrough Hole160 W- 40 C+ 150 C 
STGB15M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
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STMicroelectronics 2910
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AUD 1.4879
Multiples of: 1000

Single650 V1.55 V+/- 20 V30 A+/- 250 uA  D2PAK - 3ReelSiSmd/Smt136 W- 55 C+ 175 CStgb15m65df2
STGF20H60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics 2910
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AUD 1.7056
Multiples of: 1000

Single600 V2 V20 V40 A250 nA  TO - 220 - 3 FPTubeSiThrough Hole37 W- 55 C+ 175 C600 - 650V Igbts
IGW50N65F5FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 2910
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AUD 3.1389
Multiples of: 240

Single650 V1.6 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIgw50n65
STGD3NC120H-1


IGBT Transistors 7 A, 1200 V very fast IGBT
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STMicroelectronics 2909
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AUD 0.9551
Multiples of: 1

                
STGB40V60F


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
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STMicroelectronics 1940
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AUD 2.2937
Multiples of: 1000

Single600 V1.8 V+/- 20 V80 A250 nA  D2PAKReelSiSmd/Smt283 W- 55 C+ 175 C600 - 650V Igbts
IRG4BC30FD1PBF


IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode
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Infineon 727
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AUD 3.4474
Multiples of: 1

Single600 V1.8 V+/- 20 V31 A 100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C  
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