IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG6B330UDPBF


International Rectifier IGBT Transistors
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Infineon 3783
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AUD 4.0848
Multiples of: 1

Single330 V1.69 V+/- 30 V70 A+/- 100 nA  TO - 220 - 3TubeSiThrough Hole160 W- 40 C+ 150 C 
IKW50N65H5FKSA1


Transistor: IGBT; 650V; 50A; 305W; TO247-3; Series: H5
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Infineon 3482
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AUD 3.1586
Multiples of: 1

      305 W   Trenchstop 5    H5
SKA06N60XKSA1


Trans IGBT Chip N-CH 600V 9A 3-Pin(3+Tab) TO-220FP
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Infineon 3395
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AUD 0.9375
Multiples of: 1

Single   9 A         150 C 
NGTB25N120FL3WG


IGBT Transistors IGBT 1200V 25A FS3 SOLAR/
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ON Semiconductor 3365
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AUD 2.7737
Multiples of: 1

Single1.2 kV1.7 V+/- 20 V100 A200 nA  TO 247 - 3TubeSiThrough Hole349 W- 55 C+ 175 C 
FGA60N65SMD


Transistor: IGBT; 650V; 60A; 300W; TO3P
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ON Semiconductor 3333
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AUD 2.6655
Multiples of: 1

      300 W         
Hot IKW25N120T2


IGBT Transistors LOW LOSS DuoPack 1200V 25A
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Infineon 3272
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AUD 2.9357
Multiples of: 1

Single1200 V2.2 V+/- 20 V50 A200 nA  TO - 247 - 3TubeSiThrough Hole349 W- 40 C+ 150 CIkw25n120
IGW25N120H3FKSA1


IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 3243
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AUD 3.0957
Multiples of: 1

Single1200 V2.05 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole326 W- 40 C+ 175 CXgw25n120
IXBT42N170


IGBT Transistors BIMOSFET 1700V 75A
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IXYS 3080
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AUD 52.3907
Multiples of: 1

Single1700 V2.3 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxbt42n170
STGF20H60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics 2910
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AUD 0.8036
Multiples of: 1000

Single600 V2 V20 V40 A250 nA  TO - 220 - 3 FPTubeSiThrough Hole37 W- 55 C+ 175 C600 - 650V Igbts
IRG7PH46U-EP


IGBT Transistors IGBT DISCRETES
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Infineon 184
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AUD 9.1964
Multiples of: 1

Single1.2 kV2.1 V+/- 30 V130 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C 
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