IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH50N3


IGBT Transistors 300V PT N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 3928
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AUD 7.567
Multiples of: 1

Single300 V1.3 V+/- 20 V75 A+/- 250 nA  TO - 247 - 3TubeSiThrough Hole463 W- 55 C+ 150 CFgh50n3
GT30N135SRA,S1E


IGBT Transistors DISCRETE IGBT TRANSISTOR TO-247 Vces=1350V Ic=30A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 3900
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AUD 3.4286
Multiples of: 1

         Reel , Cut Tape      
IGB10N60TATMA1


IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech
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Infineon 3870
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AUD 0.6647
Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt110 W- 40 C+ 175 CTrenchstop Igbt
RGT30TM65DGC9


IGBT Trench Field Stop 650 V 14 A 32 W Through Hole TO-220NFM
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ROHM 3736
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AUD 2.3143
Multiples of: 1

Single650 V1.65 V30 V14 A200 nA  TO - 220 - 3TubeSiThrough Hole32 W- 40 C+ 175 C 
IRGP4266PBF


IGBT Transistors 650V Low VCEon Trench IGBT
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Infineon 3707
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AUD 6.808
Multiples of: 1

 650 V2.1 V20 V140 A100 nA450 W TO - 247TubeSiThrough Hole450 W   
IRG4BC40KPBF


Transistor: IGBT; 600V; 42A; 160W; TO220AB
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Infineon 3492
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AUD 3.4375
Multiples of: 1

      160 W         
SKA06N60XKSA1


Trans IGBT Chip N-CH 600V 9A 3-Pin(3+Tab) TO-220FP
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Infineon 3395
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AUD 0.9375
Multiples of: 1

Single   9 A         150 C 
IRG7PH35UPBF


IGBT Transistors 1200V 55A
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Infineon 3310
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AUD 3.9732
Multiples of: 1

Single1.2 kV2.2 V+/- 30 V55 A 210 W TO - 247TubeSiThrough Hole210 W- 55 C  
IXBT42N170


IGBT Transistors BIMOSFET 1700V 75A
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IXYS 3122
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AUD 40.5271
Multiples of: 1

Single1700 V2.3 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxbt42n170
IRG6B330UDPBF


International Rectifier IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 3007
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AUD 3.8393
Multiples of: 1

Single330 V1.69 V+/- 30 V70 A+/- 100 nA  TO - 220 - 3TubeSiThrough Hole160 W- 40 C+ 150 C 
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