IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGD7NB60ST4


STMicroelectronics IGBT Transistors N-Ch 600 Volt 7 Amp
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 2015
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AUD 2.46
Multiples of: 1

Single600 V1.6 V+/- 20 V15 A+/- 100 nA  TO - 252 - 3ReelSiSmd/Smt55 W- 65 C+ 150 CStgd7nb60s
IGW75N65H5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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Infineon 1988
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AUD 3.41
Multiples of: 1

Single650 V1.65 V20 V120 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
KGF40N65KDC-U/P


TO-247 IGBTs ROHS
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KEC 1980
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AUD 1.3313
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STGD14NC60KT4


STMicroelectronics IGBT Transistors N-channel MOSFET
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STMicroelectronics 1975
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AUD 1.1911
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Single600 V +/- 20 V    TO - 252 - 3ReelSiSmd/Smt - 55 C+ 150 CStgd14nc60k
NCE10TD60BK


TO-252-2 IGBTs ROHS
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NCE Power 1972
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AUD 0.8179
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IKW50N65F5FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 1963
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AUD 3.2371
Multiples of: 1

Single650 V1.6 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIkw50n65
IRGR4045DTRPBF


Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
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Infineon 1940
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AUD 1.6193
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IKB30N65EH5ATMA1


IGBT Transistors Infineon s 650 V 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
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Infineon 1912
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AUD 2.3729
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Single650 V1.65 V20 V55 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt188 W- 40 C+ 175 C650V Trenchstop 5
STGF8NC60KD


Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220FP
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STMicroelectronics 1910
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AUD 0.9366
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3 FP SiThrough Hole - 55 C+ 150 CStgf8nc60kd
IRGS4715DPBF


Transistor: IGBT; 650V; 21A; 100W; D2PAK
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Infineon 1843
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AUD 2.0205
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