IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGD3N60UNDF


Fairchild Semiconductor IGBT Transistors 600V, 3A Short Circuit Rated IGBT
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ON Semiconductor 2092
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AUD 0.9061
Multiples of: 1

Single600 V2.4 V20 V6 A10 uA  TO - 252 - 3ReelSiSmd/Smt60 W- 55 C+ 150 CFgd3n60
FGD3245G2-F085


Trans IGBT Chip N-CH 450V 23A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R
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ON Semiconductor 2088
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AUD 2.6852
Multiples of: 1

Single        Tape And Reel      
STGW40H65FB


IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
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STMicroelectronics 2037
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AUD 2.3155
Multiples of: 600

Single650 V1.6 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65fb
STGD7NB60ST4


STMicroelectronics IGBT Transistors N-Ch 600 Volt 7 Amp
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STMicroelectronics 2015
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AUD 2.296
Multiples of: 1

Single600 V1.6 V+/- 20 V15 A+/- 100 nA  TO - 252 - 3ReelSiSmd/Smt55 W- 65 C+ 150 CStgd7nb60s
Hot IKW20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon 1985
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AUD 1.3758
Multiples of: 1

Single600 V1.5 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole166 W- 40 C+ 150 CIkw20n60
STGD14NC60KT4


STMicroelectronics IGBT Transistors N-channel MOSFET
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STMicroelectronics 1975
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AUD 1.2069
Multiples of: 1

Single600 V +/- 20 V    TO - 252 - 3ReelSiSmd/Smt - 55 C+ 150 CStgd14nc60k
IRGR4045DTRPBF


Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
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Infineon 1940
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AUD 1.6193
Multiples of: 1

                
SGT40N60FD2PN


TO-3P-3 IGBTs ROHS
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Silan 1925
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AUD 1.3949
Multiples of: 1

                
STGF8NC60KD


Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220FP
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STMicroelectronics 1910
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AUD 0.9507
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3 FP SiThrough Hole - 55 C+ 150 CStgf8nc60kd
STGF14NC60KD


Transistor: IGBT; 600V; 7A; 28W; TO220FP
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STMicroelectronics 1619
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AUD 1.0657
Multiples of: 1

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