IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4BC40KPBF


Transistor: IGBT; 600V; 42A; 160W; TO220AB
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Infineon 3492
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AUD 3.4375
Multiples of: 1

      160 W         
STGD18N40LZT4


IGBT Transistors EAS 180 mJ-400 V clamped IGBT
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STMicroelectronics 2376
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AUD 1.1664
Multiples of: 1

Single360 V 12 V   Aec - Q101DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgd18n40lz
IKD04N60RATMA1


IGBT Transistors IGBT w/ INTG DIODE 600V 8A
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Infineon 2367
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AUD 0.902
Multiples of: 1

Single600 V1.65 V+/- 20 V8 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt75 W- 40 C+ 175 CRc
AOD5B65N1


Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ
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Alpha & Omega 2346
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AUD 0.904
Multiples of: 1

  2.5 V   21 W         
IRG7PH35UPBF


IGBT Transistors 1200V 55A
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Infineon 2340
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AUD 3.9732
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Single1.2 kV2.2 V+/- 30 V55 A 210 W TO - 247TubeSiThrough Hole210 W- 55 C  
STGD7NC60HT4


IGBT Transistors N-Ch 600 Volt 14 Amp
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STMicroelectronics 2289
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AUD 1.4425
Multiples of: 1

Single600 V2.5 V+/- 20 V25 A+/- 100 nA70 W TO - 252 - 3ReelSiSmd/Smt70 W- 55 C+ 150 CStgd7nc60h
STGP15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics 2269
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AUD 1.3713
Multiples of: 1

Single600 V1.6 V+/- 20 V30 A250 nA115 W TO - 220 - 3TubeSiThrough Hole115 W- 55 C+ 175 CStgp15h60df
IRGP4760DPBF


IGBT Transistors 650V UltraFast IGBT TO-247
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Infineon 2231
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AUD 6.7634
Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole    
IKD10N60RATMA1


Infineon Technologies IGBT Transistors IGBT w INTG DIODE 600V 20A
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Infineon 2224
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AUD 0.7747
Multiples of: 1

Single600 V1.65 V+/- 20 V20 A100 nA  TO - 252 - 3ReelSiSmd/Smt150 W- 40 C+ 175 CIkd10n60
AOK40B65H2AL


Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
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Alpha & Omega 2203
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AUD 1.8354
Multiples of: 1

  2.05 V   105 W         
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