IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGD3325G2-F085


ECOSPARK 2 IGNITION IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1370
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AUD 2.0344
Multiples of: 1

                
IKW30N65NL5XKSA1


IGBT Transistors 650V IGBT Trenchstop 5
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Infineon 1358
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AUD 4.6131
Multiples of: 1

Single650 V1.05 V20 V85 A100 nA  TO - 247 - 3TubeSiThrough Hole227 W- 40 C+ 175 CTrenchstop 5 L5
FGD3N60LSDTM


IGBT Transistors 600V IGBT HID Application
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ON Semiconductor 1347
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AUD 0.7749
Multiples of: 1

Single600 V +/- 20 V    DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CFgd3n60
IRGP4790DPBF


Transistor: IGBT; 650V; 140A; 455W; TO247-3
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Infineon 1324
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AUD 9.499
Multiples of: 1

      455 W         
IXXH50N60C3D1


IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked
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IXYS 1315
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AUD 10.4063
Multiples of: 1

 600 V2.3 V20 V100 A100 nA  TO - 247ADTubeSiThrough Hole600 W- 55 C+ 150 CIxxh50n60
IXGH16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS 1309
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AUD 14.6667
Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
IXXH60N65B4H1


IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
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IXYS 1307
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AUD 11.2955
Multiples of: 1

Single650 V1.7 V20 V116 A100 nA  TO - 247AD - 3TubeSiThrough Hole380 W- 55 C+ 175 CIxxh60n65
FGH40N120ANTU


IGBT Transistors 1200V NPT
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ON Semiconductor 1285
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AUD 8.1101
Multiples of: 1

Single1200 V +/- 25 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n120an
IGW50N60H3FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 1270
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AUD 3.0384
Multiples of: 1

        TO - 247 - 3Tube      
IRG4PSH71KPBF


IGBT Transistors 1200V UltraFast 4-20kHz
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Infineon 1264
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AUD 16.9231
Multiples of: 1

Single1.2 kV3.9 V+/- 20 V78 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
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