IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW30N60TFKSA1


IGBT Transistors LOW LOSS DuoPack 600V 30A
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Infineon 2961
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AUD 2.8443
Multiples of: 1

Single600 V1.9 V20 V45 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 175 CXkw30n60
RGT8NS65DGC9


IGBT Trench Field Stop 650 V 8 A 65 W Through Hole TO-262
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ROHM 944
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AUD 1.68
Multiples of: 1

Single650 V1.65 V30 V8 A200 nA  TO - 262 - 3TubeSiThrough Hole65 W- 40 C+ 175 C 
STGF30V60DF


STMicroelectronics IGBT Transistors
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STMicroelectronics 944
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AUD 1.98
Multiples of: 1

          Si    Stgf30v60df
RGT30NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 944
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AUD 2.2471
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt133 W- 40 C+ 175 C 
IKW30N65EL5XKSA1


Transistor: IGBT; 650V; 62A; 114W; TO247-3
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Infineon 931
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AUD 3.0171
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      114 W   Trenchstop 5     
IGW50N65F5FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 931
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AUD 2.7029
Multiples of: 1

Single650 V1.6 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIgw50n65
IGP40N65F5XKSA1


Transistor: IGBT; 650V; 45A; 125W; TO220-3; Series: F5
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Infineon 921
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AUD 2.1741
Multiples of: 1

      125 W   Trenchstop 5    F5
IHW40N135R5


IGBT Transistors HOME APPLIANCES 14
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Infineon 919
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AUD 3.1918
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IGB20N65S5ATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 917
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AUD 1.0639
Multiples of: 1

         Cut Tape      
DGTD65T15H2TF


IGBT Transistors IGBT 600V-X
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Diodes Incorporated 917
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AUD 1.4504
Multiples of: 1

Single650 V1.65 V 30 A+/- 100 nA  I TO - 220AB - 3  Through Hole48 W- 40 C+ 175 C 
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