IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB10NB37LZT4


STMicroelectronics IGBT Transistors 10 A - 410 V Int Clamped IGBT
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STMicroelectronics 970
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AUD 2.5246
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Single440 V 16 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 65 C+ 150 CStgb10nb37lz
STGB3NC120HDT4


IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
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STMicroelectronics 970
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AUD 2.6205
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 1200 V2.3 V20 V14 A100 nA75 W D2PAKReelSiSmd/Smt75 W  Stgb3nc120hd
AIKB15N65DF5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 970
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AUD 3.1032
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         Cut Tape      
AIKB15N65DH5ATMA1


IGBT Transistors DISCRETE SWITCHES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 970
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AUD 3.1032
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RGT40NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 970
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AUD 3.4523
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Single650 V1.65 V30 V40 A200 nA  TO - 262 - 3TubeSiThrough Hole161 W- 40 C+ 175 C 
IKW75N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon 969
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AUD 4.7262
Multiples of: 240

Single650 V1.42 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 S5
IGB50N65H5ATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 965
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AUD 2.9571
Multiples of: 1

Single650 V1.65 V20 V80 A100 nA  TO - 263 - 3Cut Tape Smd/Smt270 W- 40 C+ 175 CTrenchstopâ ¢5
RGT30NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 962
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AUD 2.2115
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt133 W- 40 C+ 175 C 
STGB10NC60KDT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics 954
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AUD 1.0506
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60kd
IKW75N65EH5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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Infineon 452
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AUD 4.2079
Multiples of: 1

Single650 V1.65 V20 V90 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
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