IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW30N65L5XKSA1


IGBT Transistors 650V IGBT Trenchstop 5
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 2950
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AUD 2.9386
Multiples of: 1

Single650 V1.05 V20 V85 A100 nA  TO - 247 - 3TubeSiThrough Hole227 W- 40 C+ 175 CTrenchstop 5 L5
AIGB15N65F5ATMA1


IGBT Transistors DISCRETE SWITCHES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 950
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AUD 2.4643
Multiples of: 1

         Cut Tape      
IKB30N65ES5ATMA1


IGBT Transistors INDUSTRY 14
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Infineon 949
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AUD 3.2127
Multiples of: 1

Single650 V1.35 V20 V62 A100 nA  TO - 263 - 3Cut Tape Smd/Smt188 W- 40 C+ 175 C 
CRG40T60AK3SD


TO-247 IGBTs ROHS
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CRMICRO 944
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AUD 1.587
Multiples of: 1

                
RGT8NS65DGC9


IGBT Trench Field Stop 650 V 8 A 65 W Through Hole TO-262
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ROHM 944
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AUD 1.68
Multiples of: 1

Single650 V1.65 V30 V8 A200 nA  TO - 262 - 3TubeSiThrough Hole65 W- 40 C+ 175 C 
STGF30V60DF


STMicroelectronics IGBT Transistors
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STMicroelectronics 944
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AUD 1.98
Multiples of: 1

          Si    Stgf30v60df
RGT30NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 944
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AUD 2.1214
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt133 W- 40 C+ 175 C 
DGTD65T15H2TF


IGBT Transistors IGBT 600V-X
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 931
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AUD 1.4709
Multiples of: 1

Single650 V1.65 V 30 A+/- 100 nA  I TO - 220AB - 3  Through Hole48 W- 40 C+ 175 C 
IGW75N60TFKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 75A
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Infineon 931
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AUD 3.1964
Multiples of: 240

Single600 V1.5 V+/- 20 V150 A100 nA  TO - 247 - 3TubeSiThrough Hole428 W- 40 C+ 175 CXgw75n60
FGA40N65SMD


IGBT Transistors 650V, 40A Field Stop IGBT
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ON Semiconductor 915
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AUD 2.889
Multiples of: 1

 650 V2.5 V20 V80 A400 nA349 W TO - 3PNTubeSiThrough Hole349 W  Fga40n65smd
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