IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW40N135R5


IGBT Transistors HOME APPLIANCES 14
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Infineon 931
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AUD 4.2265
Multiples of: 1

                
IGB20N65S5ATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 927
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AUD 1.0796
Multiples of: 1

         Cut Tape      
RGT40NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 923
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AUD 2.4043
Multiples of: 1

Single650 V1.65 V30 V40 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt161 W- 40 C+ 175 C 
IKW30N60T


IGBT Transistors LOW LOSS DuoPack 600V 30A
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Infineon 916
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AUD 1.9521
Multiples of: 1

Single600 V1.5 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 150 CIkw30n60
IXYX30N170CV1


IGBT Transistors 1700V/108A High Voltage XPT IGBT
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IXYS 907
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AUD 42.0829
Multiples of: 1

Single1700 V3 V20 V108 A100 nA  TO - 247PLUS - 3TubeSiThrough Hole937 W- 55 C+ 175 C 
IKP08N65F5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 903
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AUD 0.9381
Multiples of: 1

Single650 V1.9 V20 V18 A100 nA  TO - 220 - 3TubeSiThrough Hole70 W- 40 C+ 175 CTrenchstop 5 F5
RGT40TM65DGC9


IGBT Trench Field Stop 650 V 17 A 39 W Through Hole TO-220NFM
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ROHM 902
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AUD 2.4357
Multiples of: 1

Single650 V1.65 V30 V17 A200 nA  TO - 220 - 3TubeSiThrough Hole39 W- 40 C+ 175 C 
IGB15N60T


Transistor: IGBT; 600V; 15A; 130W; D2PAK
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Infineon 900
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AUD 1.0843
Multiples of: 1

      130 W         
IKA06N60TXKSA1


Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
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Infineon 892
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AUD 0.9535
Multiples of: 500

      28 W   Trenchstop     
CRG50T60AK3SD


TO-247 IGBTs ROHS
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CRMICRO 790
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AUD 1.8557
Multiples of: 1

                
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