IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
G40T120AK3S


278W 238ns 77ns +150℃@(Tj) 80A 1.2kV 6V@250uA 208nC@40A,15V 1.9V@10A,15V 1.5mJ 2.8mJ 1mA@1.2kV 6.618nF@25V 2.4V@20A 160A TO-247 IGBTs ROHS
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CRMICRO 899
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AUD 3.7603
Multiples of: 1

                
STGB19NC60HDT4


STMicroelectronics IGBT Transistors N Ch 600V 19A
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STMicroelectronics 892
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AUD 2.9571
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Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60hd
IXXH80N65B4


IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
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IXYS 892
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AUD 7.1254
Multiples of: 1

Single650 V1.65 V20 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 175 CIxxh80n65
RGT50NS65DGC9


IGBT Trench Field Stop 650 V 48 A 194 W Through Hole TO-262
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ROHM 888
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AUD 2.99
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Single650 V1.65 V30 V48 A200 nA  TO - 262 - 3TubeSiThrough Hole194 W- 40 C+ 175 C 
STGF19NC60KD


igbts 600v 16a to-220f (to-220is) rohs
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STMicroelectronics 882
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AUD 1.2082
Multiples of: 1

                
STGP30NC60W


IGBT Transistors N-channel MOSFET
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STMicroelectronics 881
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AUD 2.7795
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Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CStgp30nc60w
IKW50N65RH5XKSA1


IGBT Trench Field Stop 650V 80A 305W Through Hole PG-TO247-3
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Infineon 874
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AUD 5.9269
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        TO - 247 - 3Tube     Trenchstop 5
FGL40N120ANTU


Fairchild Semiconductor IGBT Transistors 1200V NPT IGBT
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ON Semiconductor 873
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AUD 17.4107
Multiples of: 1

Single1200 V +/- 25 V    TO - 264 - 3TubeSiThrough Hole - 55 C+ 150 CFgl40n120an
IGP10N60T


Transistor: IGBT; 600V; 18A; 110W; TO220-3
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Infineon 872
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AUD 0.7043
Multiples of: 1

      110 W         
IGU04N60TAKMA1


IGBT Transistors Infineons TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
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Infineon 871
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AUD 1.1555
Multiples of: 1

        TO - 251 - 3TubeSi    Trenchstop Igbt
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