IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...3132333435...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW50N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 274W Through Hole PG-TO247-3
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Infineon 592
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AUD 8.7931
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
MLG50N60FUK


TO-247 IGBT Transistors / Modules ROHS
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Minos 582
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AUD 1.8459
Multiples of: 1

                
STGWT20V60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics 582
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AUD 2.0358
Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 3PTubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGWT30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics 582
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AUD 2.4619
Multiples of: 1

Single600 V2.3 V20 V60 A250 nA  TO - 3P - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
STGW20NC60V


IGBT Transistors N-Ch 600 Volt 30 Amp
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STMicroelectronics 582
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AUD 3.1121
Multiples of: 600

Single600 V2.5 V+/- 20 V60 A+/- 100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CStgw20nc60v
STGW60H65DFB


IGBT Transistors 600V 60A trench gate field-stop IGBT
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STMicroelectronics 582
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AUD 3.3601
Multiples of: 600

Single650 V1.6 V20 V80 A250 nA375 W TO - 247 - 3Tube Through Hole - 55 C+ 175 CStgw60h65
STGW30NC60WD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 582
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AUD 3.778
Multiples of: 600

Single600 V2.1 V+/- 20 V 100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CStgw30nc60wd
STGW30NC120HD


Transistor: IGBT; 1200V; 30A; 220W; TO247-3
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STMicroelectronics 582
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AUD 3.7892
Multiples of: 600

      220 W         
AUIRGP65G40D0


Trans IGBT Chip N-CH 600V 62A Tube
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Infineon 582
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AUD 9.7248
Multiples of: 1

                
Hot IKW75N65ES5


IGBT Transistors Trenchstop 5 IGBT
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Infineon 576
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AUD 2.5984
Multiples of: 1

Single650 V1.75 V+/- 2080 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 S5
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First...3132333435...

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