IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW50N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 592
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AUD 3.1586
Multiples of: 1

Single650 V2.1 V20 V80 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole145 W- 40 C+ 175 CTrenchstop 5 H5
STGWT20V60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics 582
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AUD 1.9957
Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 3PTubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGWT30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics 582
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AUD 2.09
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Single600 V2.3 V20 V60 A250 nA  TO - 3P - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
STGW60H65DFB


IGBT Transistors 600V 60A trench gate field-stop IGBT
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STMicroelectronics 582
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AUD 2.6857
Multiples of: 600

Single650 V1.6 V20 V80 A250 nA375 W TO - 247 - 3Tube Through Hole - 55 C+ 175 CStgw60h65
STGWT60H65FB


IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
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STMicroelectronics 582
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AUD 2.8571
Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA375 W TO - 3PTubeSiThrough Hole375 W- 40 C+ 175 CStgwt60h65fb
STGW30NC60WD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 582
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AUD 3.0446
Multiples of: 600

Single600 V2.1 V+/- 20 V 100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CStgw30nc60wd
STGW30NC120HD


Transistor: IGBT; 1200V; 30A; 220W; TO247-3
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STMicroelectronics 582
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AUD 3.0554
Multiples of: 600

      220 W         
AUIRGP65G40D0


Trans IGBT Chip N-CH 600V 62A Tube
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Infineon 582
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AUD 9.308
Multiples of: 1

                
STGFW30H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics 581
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AUD 1.98
Multiples of: 1

Single650 V1.55 V20 V60 A250 nA  TO - 3PFTubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
IKW75N65EL5XKSA1


Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5
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Infineon 338
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AUD 5.2329
Multiples of: 1

Single650 V1.1 V20 V80 A100 nA  PG - TO 247 - 3TubeSiThrough Hole536 W- 40 C+ 175 CTrenchstop 5 L5
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First...3132333435...

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