IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...3132333435...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NCE15TD60BD


IGBTs TO-263 RoHS
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NCE Power 627
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AUD 0.9853
Multiples of: 1

                
RGW80TS65GC11


IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT
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ROHM 577
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AUD 4.4585
Multiples of: 1

Single650 V1.5 V30 V78 A200 nA  TO - 247N - 3TubeSiThrough Hole214 W- 40 C+ 175 C 
ISL9V5045S3ST_F085


IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
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ON Semiconductor 576
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AUD 4.3089
Multiples of: 1

Single480 V1.25 V10 V51 A 300 mW D2PAK - 3ReelSiSmd/Smt300 mW- 40 C+ 175 CIsl9v5045
STGW30H60DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 574
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AUD 1.6154
Multiples of: 592

Single600 V1.55 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
HGTG10N120BND


Transistor: IGBT; 1.2kV; 17A; 298W; TO247
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ON Semiconductor 572
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AUD 3.4598
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      298 W         
Hot IHW15N120R3


Infineon Technologies IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Infineon 562
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AUD 1.7914
Multiples of: 1

Single1200 V1.7 V20 V30 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole254 W- 40 C+ 175 CIhw15n120
STGB10NB37LZT4


STMicroelectronics IGBT Transistors 10 A - 410 V Int Clamped IGBT
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STMicroelectronics 558
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AUD 1.3059
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Single440 V 16 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 65 C+ 150 CStgb10nb37lz
NGTB40N120FL2WG


IGBT Transistors 1200V/40A FAST IGBT FSII
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ON Semiconductor 557
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AUD 3.331
Multiples of: 1

Single1200 V2 V30 V80 A200 nA535 W TO - 247TubeSiThrough Hole535 W- 55 C+ 175 CNgtb40n120fl2
STGWT30H60DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 552
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AUD 1.8815
Multiples of: 1

Single600 V1.55 V20 V60 A250 nA  TO - 3PTube Through Hole260 W- 55 C+ 175 C600 - 650V Igbts
IGP40N65H5XKSA1


Transistor: IGBT; 650V; 74A; 250W; TO220-3; Series: H5
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Infineon 165
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AUD 1.6343
Multiples of: 1

      250 W        H5
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First...3132333435...

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