IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKD06N60RF


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon 544
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AUD 0.5876
Multiples of: 1

Single600 V2.2 V+/- 20 V12 A100 nA  TO - 252 - 3ReelSiSmd/Smt100 W- 40 C+ 175 CRc
IKW50N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 274W Through Hole PG-TO247-3
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Infineon 535
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AUD 7.3857
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
FGB3236_F085


Fairchild Semiconductor IGBT Transistors 320MJ 360V N-CH IGNITION IGBT
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ON Semiconductor 530
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AUD 3.0192
Multiples of: 1

         ReelSi    Fgb3236_F085
STGWT40V60DLF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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STMicroelectronics 525
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AUD 3.3577
Multiples of: 1

Single600 V2.35 V20 V80 A250 nA  TO - 3PTubeSiThrough Hole283 W- 55 C+ 175 C600 - 650V Igbts
RGW60TS65GC11


IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
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ROHM 525
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AUD 4.0071
Multiples of: 1

Single650 V1.5 V30 V60 A200 nA  TO - 247N - 3TubeSiThrough Hole178 W- 40 C+ 175 C 
WG50N65DHWQ


IGBT Transistors WG50N65DHW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK
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WeEn Semiconductor 521
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AUD 2.7657
Multiples of: 1

        TO - 247Tube SMD/SMT   WNSC2D
STGWA80H65DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 517
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AUD 4.8567
Multiples of: 1

Single650 V2 V+/- 20 V120 A250 nA  TO - 247 - 3 SiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
FGH40N60SFTU


IGBT Transistors N-CH / 40A 600V FS Planar
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ON Semiconductor 516
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AUD 3.7086
Multiples of: 1

Single600 V2.3 V20 V80 A400 nA290 W TO - 247Tube Through Hole - 55 C+ 150 CFgh40n60
NCE60TD65BT


TO-247 IGBTs ROHS
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NCE Power 410
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AUD 2.4069
Multiples of: 1

                
CRG75T65AK5HD


TO-247 IGBTs ROHS
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CRMICRO 48
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AUD 1.9778
Multiples of: 1

                
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