IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW40N120T2FKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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Infineon 573
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AUD 5.6222
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Single1200 V1.75 V+/- 20 V75 A200 nA  TO - 247 - 3TubeSiThrough Hole480 W- 40 C+ 175 CXkw40n120
MLG40N60FUK


TO-247 IGBT Transistors / Modules ROHS
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Minos 572
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AUD 1.6678
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IKW75N65EH5


TO-247-3 IGBTs ROHS
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Infineon 572
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AUD 3.3425
Multiples of: 1

          si     
HGTG10N120BND


Transistor: IGBT; 1.2kV; 17A; 298W; TO247
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ON Semiconductor 572
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AUD 4.0427
Multiples of: 1

      298 W         
IGP50N60T


Transistor: IGBT; 600V; 50A; 333W; TO220-3
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Infineon 564
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AUD 3.3969
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      333 W         
IXGH48N60C3D1


IGBT Transistors 30 Amps 600V
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IXYS 562
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AUD 9.2016
Multiples of: 1

Single600 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh48n60
STGW20IH125DF


STMicroelectronics IGBT Transistors 1250V 20A trench gate field-stop IGBT
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STMicroelectronics 557
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AUD 2.7321
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Single1.25 kV2.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
NGTB50N60S1WG


ON Semiconductor IGBT Transistors FSII 50A 600V Welding
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ON Semiconductor 552
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AUD 5.8284
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Single600 V1.8 V+/- 20 V100 A200 nA  TO - 247 - 3TubeSiThrough Hole417 W- 55 C+ 175 C 
IGW15N120H3


Transistor: IGBT; 1200V; 30A; 217W; TO247-3; Series: H3
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Infineon 544
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AUD 2.3571
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      217 W   Trenchstop 3    H3
IKW40N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 329
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AUD 1.5094
Multiples of: 1

Single650 V2.1 V20 V74 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole120 W- 40 C+ 175 CTrenchstop 5 H5
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First...3637383940...

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