IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4142434445...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGN72N60C3H1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A
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IXYS 477
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AUD 32.6159
Multiples of: 1

 600 V2.1 V20 V78 A100 nA  SOT - 227B - 4TubeSiSmd/Smt360 W- 55 C+ 150 CIxgn72n60
APT25GN120SG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 476
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AUD 11.7831
Multiples of: 1

Single1.2 kV1.7 V30 V67 A600 nA  D3PAK - 3TubeSiSmd/Smt272 W- 55 C+ 150 C 
IKP30N65F5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon 472
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AUD 2.8476
Multiples of: 1

Single650 V1.6 V20 V55 A100 nA  TO - 220 - 3TubeSiThrough Hole188 W- 40 C+ 175 CTrenchstop 5 F5
IGW75N65H5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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Infineon 472
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AUD 3.4571
Multiples of: 1

Single650 V1.65 V20 V120 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
SGP10N60RUFDTU


IGBT Transistors Dis Short Circuit Rated IGBT
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ON Semiconductor 471
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AUD 2.1302
Multiples of: 1

Single600 V2.2 V+/- 20 V16 A+/- 100 nA75 W TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 CSgp10n60
IKP06N60TXKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6A
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Infineon 465
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AUD 0.8346
Multiples of: 1

Single600 V1.5 V+/- 20 V12 A100 nA  TO - 220 - 3TubeSiThrough Hole88 W- 40 C+ 175 CXkp06n60
IKW30N60TFKSA1


IGBT Transistors LOW LOSS DuoPack 600V 30A
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Infineon 465
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AUD 2.9653
Multiples of: 1

Single600 V1.9 V20 V45 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 175 CXkw30n60
AIKW50N60CTXKSA1


IGBT Transistors DISCRETES
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Infineon 465
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AUD 9.5286
Multiples of: 1

         TubeSi    600V Trenchstop
IKP08N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 464
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AUD 1.1506
Multiples of: 1

Single650 V1.95 V20 V18 A100 nA  TO - 220 - 3TubeSiThrough Hole70 W- 40 C+ 175 CTrenchstop 5 H5
IKFW75N65EH5XKSA1


IGBT Trench Field Stop 650V 80A 148W Through Hole PG-HSIP247-3-2
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Infineon 464
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AUD 6.5302
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
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First...4142434445...

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