IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4142434445...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGTH00TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 433
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AUD 4.0615
Multiples of: 1

 650 V1.6 V+/- 30 V85 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole277 W- 40 C+ 175 CRgth00ts65
RGTH60TK65DGC11


IGBT Trench Field Stop 650 V 28 A 61 W Through Hole TO-3PFM
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ROHM 433
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AUD 5.8476
Multiples of: 1

Single650 V1.6 V30 V28 A200 nA  TO - 3PFMTubeSiThrough Hole61 W- 40 C+ 175 C 
IGB20N60H3


Transistor: IGBT; 600V; 20A; 170W; D2PAK
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Infineon 431
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AUD 1.1189
Multiples of: 1

      170 W         
RGW50TS65DGC11


IGBT Transistors 650V 25A Field Stop Trench IGBT
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ROHM 430
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AUD 4.8345
Multiples of: 1

Single650 V1.9 V30 V50 A   TO - 247N - 3TubeSiThrough Hole156 W- 40 C+ 175 C 
IXXH30N60C3D1


IGBT Transistors XPT 600V IGBT 30A
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IXYS 428
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AUD 6.2386
Multiples of: 1

         TubeSi    Ixxh30n60
FGA30T65SHD


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 426
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AUD 1.5211
Multiples of: 1

 650 V2.14 V30 V60 A400 nA  TO - 3PNTubeSiThrough Hole238 W- 55 C+ 175 CFga30t65shd
IXYP20N65C3D1


IGBT Transistors IGBT XPT-GENX3
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IXYS 426
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AUD 2.8443
Multiples of: 1

         TubeSi    Planar
RGTH40TK65GC11


IGBT Trench Field Stop 650 V 23 A 56 W Through Hole TO-3PFM
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ROHM 426
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AUD 4.0071
Multiples of: 1

Single650 V1.6 V30 V23 A200 nA  TO - 3PFMTubeSiThrough Hole56 W- 40 C+ 175 C 
RGW50TK65GVC11


IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
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ROHM 426
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AUD 4.356
Multiples of: 1

Single650 V1.9 V30 V30 A   TO - 3PFM - 3TubeSiThrough Hole67 W- 40 C+ 175 C 
FGH40T120SMD_F155


IGBT Transistors 1200V, 40A Field Stop Trench IGBT
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ON Semiconductor 420
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AUD 8.25
Multiples of: 1

Single1200 V2 V+/- 25 V80 A400 nA555 W TO - 247G03 - 3TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120
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First...4142434445...

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