IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGTH60TK65DGC11


IGBT Trench Field Stop 650 V 28 A 61 W Through Hole TO-3PFM
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ROHM 433
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AUD 5.8476
Multiples of: 1

Single650 V1.6 V30 V28 A200 nA  TO - 3PFMTubeSiThrough Hole61 W- 40 C+ 175 C 
RGS00TS65HRC11


IGBT Transistors 650V 50A FIELD STOP TRENCH IGB
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ROHM 431
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AUD 6.3338
Multiples of: 1

Single650 V1.65 V30 V88 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole326 W- 40 C+ 175 C 
RGW50TS65DGC11


IGBT Transistors 650V 25A Field Stop Trench IGBT
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ROHM 430
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AUD 4.5821
Multiples of: 1

Single650 V1.9 V30 V50 A   TO - 247N - 3TubeSiThrough Hole156 W- 40 C+ 175 C 
STGFW20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 429
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AUD 2.1825
Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 3PF - 3TubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
IXGH48N60A3


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS 428
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AUD 6.2857
Multiples of: 1

Single600 V1.18 V20 V120 A100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
FGA30T65SHD


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 426
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AUD 2.3382
Multiples of: 1

 650 V2.14 V30 V60 A400 nA  TO - 3PNTubeSiThrough Hole238 W- 55 C+ 175 CFga30t65shd
RGTH40TK65GC11


IGBT Trench Field Stop 650 V 23 A 56 W Through Hole TO-3PFM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 426
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AUD 4.0338
Multiples of: 1

Single650 V1.6 V30 V23 A200 nA  TO - 3PFMTubeSiThrough Hole56 W- 40 C+ 175 C 
RGW50TK65GVC11


IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
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ROHM 426
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AUD 4.6389
Multiples of: 1

Single650 V1.9 V30 V30 A   TO - 3PFM - 3TubeSiThrough Hole67 W- 40 C+ 175 C 
NGTB75N65FL2WG


ON Semiconductor IGBT Transistors
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ON Semiconductor 424
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AUD 10.6968
Multiples of: 1

         TubeSi    Ngtb75n65fl2
IXGH28N60B3D1


IGBT Transistors 28 Amps 600V
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IXYS 423
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AUD 5.1552
Multiples of: 1

Single600 V1.5 V 66 A+/- 100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh28n60
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First...4142434445...

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