IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4142434445...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWT20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 463
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AUD 2.2175
Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 3P - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGP30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics 463
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AUD 2.2698
Multiples of: 1

Single600 V2.3 V20 V60 A250 nA  TO - 220 - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
IKA15N65H5XKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 461
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AUD 1.567
Multiples of: 1

Single650 V1.65 V+/- 20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole33.3 W- 40 C+ 175 CIka15n65
IKW75N60H3FKSA1


IGBT Transistors INDUSTRY 14
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Infineon 458
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AUD 5.2905
Multiples of: 1

Single600 V2.3 V20 V80 A100 nA428 W PG - TO - 247 - 3TubeSiThrough Hole428 W- 40 C+ 175 CIkw75n60
IGP30N65H5


Transistor: IGBT; 650V; 35A; 93W; TO220-3; Series: H5
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Infineon 458
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AUD 2.1357
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      93 W   Trenchstop 5    H5
STGW35NB60SD


Transistor: IGBT; 600V; 35A; 200W; TO247-3
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STMicroelectronics 457
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AUD 5.8492
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      200 W         
AOK20B65M2


Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
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Alpha & Omega 455
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AUD 4.8246
Multiples of: 1

  1.7 V   114 W         
IKW75N65RH5XKSA1


IGBT Trench Field Stop 650V 80A 395W Through Hole PG-TO247-3
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Infineon 455
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AUD 7.8262
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
IGW15T120


Transistor: IGBT; 1200V; 15A; 110W; TO247-3
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Infineon 452
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AUD 3.4921
Multiples of: 1

      110 W         
IKW15N120H3


Transistor: IGBT; 1200V; 30A; 217W; TO247-3; Series: H3
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Infineon 362
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AUD 3.2825
Multiples of: 1

      217 W   Trenchstop 3    H3
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First...4142434445...

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