IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4142434445...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGW50TK65DGVC11


IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 434
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AUD 5.2785
Multiples of: 1

Single650 V1.9 V30 V30 A   TO - 3PFM - 3TubeSiThrough Hole67 W- 40 C+ 175 C 
RGTH50TK65DGC11


IGBT Trench Field Stop 650 V 26 A 59 W Through Hole TO-3PFM
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ROHM 434
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AUD 5.5429
Multiples of: 1

Single650 V1.6 V30 V26 A200 nA  TO - 3PFMTubeSiThrough Hole59 W- 40 C+ 175 C 
RGTH80TK65DGC11


IGBT Trench Field Stop 650 V 31 A 66 W Through Hole TO-3PFM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 434
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AUD 6
Multiples of: 1

Single650 V1.6 V30 V31 A200 nA  TO - 3PFMTubeSiThrough Hole66 W- 40 C+ 175 C 
RGTH00TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 433
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AUD 4.0615
Multiples of: 1

 650 V1.6 V+/- 30 V85 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole277 W- 40 C+ 175 CRgth00ts65
RGTH60TK65DGC11


IGBT Trench Field Stop 650 V 28 A 61 W Through Hole TO-3PFM
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ROHM 433
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AUD 5.8476
Multiples of: 1

Single650 V1.6 V30 V28 A200 nA  TO - 3PFMTubeSiThrough Hole61 W- 40 C+ 175 C 
RGW50TS65DGC11


IGBT Transistors 650V 25A Field Stop Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 430
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AUD 5.28
Multiples of: 1

Single650 V1.9 V30 V50 A   TO - 247N - 3TubeSiThrough Hole156 W- 40 C+ 175 C 
RGW60TK65DGVC11


IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
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ROHM 430
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AUD 5.72
Multiples of: 1

Single650 V1.5 V30 V33 A200 nA  TO - 3PFMTubeSiThrough Hole72 W- 40 C+ 175 C 
NCE25TD120BT


TO-247 IGBTs ROHS
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NCE Power 427
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AUD 2.3363
Multiples of: 1

                
IXXH30N60C3D1


IGBT Transistors XPT 600V IGBT 30A
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IXYS 427
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AUD 7.0893
Multiples of: 1

         TubeSi    Ixxh30n60
IKW40N120T2FKSA1


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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Infineon 394
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AUD 6.3643
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Single1200 V1.75 V+/- 20 V75 A200 nA  TO - 247 - 3TubeSiThrough Hole480 W- 40 C+ 175 CXkw40n120
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First...4142434445...

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