IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKA06N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6.2A
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Infineon 422
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AUD 1.4055
Multiples of: 1

Single600 V1.5 V+/- 20 V10 A100 nA  TO - 220 - 3 FPTubeSiThrough Hole28 W- 40 C+ 150 CIka06n60
IXYH10N170CV1


IGBT Transistors 1700V/10A XPT IGBT w/ Diode
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IXYS 420
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AUD 9.7429
Multiples of: 1

Single1700 V4.1 V20 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole280 W- 55 C+ 175 C 
STGW40V60F


IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
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STMicroelectronics 420
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AUD 3.5463
Multiples of: 1

Single600 V2.35 V+/- 20 V80 A 283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40v60f
FGA3060ADF


IGBT Transistors 600V proliferation PFC home application
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ON Semiconductor 418
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AUD 2.5187
Multiples of: 1

Single600 V1.8 V30 V60 A400 nA  TO - 3PNBulkSiThrough Hole176 W- 55 C+ 175 CFga3060adf
RGCL80TS60GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 415
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AUD 3.4854
Multiples of: 1

Single600 V1.4 V30 V65 A200 nA  TO - 247N - 3BulkSiThrough Hole148 W- 40 C+ 175 C 
RGTH60TK65GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 415
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AUD 4.6885
Multiples of: 1

Single650 V1.6 V30 V28 A200 nA  TO - 3PFMTubeSiThrough Hole61 W- 40 C+ 175 C 
RGW60TS65DGC11


IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
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ROHM 414
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AUD 4.8008
Multiples of: 1

Single650 V1.5 V30 V60 A200 nA  TO - 247N - 3TubeSiThrough Hole178 W- 40 C+ 175 C 
IKZ75N65EH5XKSA1


Transistor: IGBT; 650V; 75A; 197W; TO247-4; Series: H5
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Infineon 414
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AUD 6.1111
Multiples of: 1

      197 W   Trenchstop 5    H5
RGTH40TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM 412
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AUD 2.7954
Multiples of: 1

 650 V1.6 V+/- 30 V40 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole144 W- 40 C+ 175 CRgth40ts65
IGW15N120H3


Transistor: IGBT; 1200V; 30A; 217W; TO247-3; Series: H3
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Infineon 405
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AUD 2.2164
Multiples of: 1

      217 W   Trenchstop 3    H3
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