IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW75N60TFKSA1


Transistor: IGBT; 600V; 75A; 428W; TO247-3
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Infineon 477
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AUD 7.4989
Multiples of: 1

      428 W         
STGWA40H65DFB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics 401
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AUD 3.9146
Multiples of: 1

Single650 V1.6 V20 V80 A+/- 250 nA  TO - 247 - 3 SiThrough Hole283 W- 55 C+ 175 CStgwa40h65dfb
FGA40T65SHDF


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 399
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AUD 2.9857
Multiples of: 1

 650 V1.81 V30 V80 A400 nA  TO - 3PNTubeSiThrough Hole268 W- 55 C+ 175 CFga40t65shdf
IKA08N65F5


Transistor: IGBT; 650V; 10.8A; 31.2W; TO220FP; Series: F5
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Infineon 396
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AUD 0.9155
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      31.2 W   Trenchstop 5    F5
IXYY8N90C3


IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3
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IXYS 396
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AUD 2.6714
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Single900 V2.5 V20 V20 A100 nA  TO - 252 - 3TubeSiSmd/Smt - 55 C+ 175 CPlanar
IGW100N60H3


Transistor: IGBT; 600V; 100A; 714W; TO247-3; Series: H3
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Infineon 396
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AUD 5.4214
Multiples of: 1

      714 W   Trenchstop 3    H3
RGTH00TK65GC11


IGBT Trench Field Stop 650 V 35 A 72 W Through Hole TO-3PFM
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ROHM 395
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AUD 5.5157
Multiples of: 1

Single650 V1.6 V30 V35 A200 nA  TO - 3PFMTubeSiThrough Hole72 W- 40 C+ 175 C 
STGW28IH125DF


STMicroelectronics IGBT Transistors 1250V 25A trench gate field-stop IGBT
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STMicroelectronics 391
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AUD 3.0728
Multiples of: 1

Single1.25 kV2.65 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGW40V60F


IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
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STMicroelectronics 390
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AUD 3.63
Multiples of: 1

Single600 V2.35 V+/- 20 V80 A 283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40v60f
FGPF4565


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 388
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AUD 1.7757
Multiples of: 1

 650 V1.88 V25 V170 A400 nA  TO - 220FTubeSiThrough Hole30 W- 55 C+ 150 CFgpf4565
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