IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4647484950...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGS00TS65HRC11


IGBT Transistors 650V 50A FIELD STOP TRENCH IGB
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ROHM 431
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AUD 6.3338
Multiples of: 1

Single650 V1.65 V30 V88 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole326 W- 40 C+ 175 C 
RGW50TS65DGC11


IGBT Transistors 650V 25A Field Stop Trench IGBT
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ROHM 430
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AUD 4.5821
Multiples of: 1

Single650 V1.9 V30 V50 A   TO - 247N - 3TubeSiThrough Hole156 W- 40 C+ 175 C 
STGFW20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 429
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AUD 2.1825
Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 3PF - 3TubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
STGW40V60F


IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
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STMicroelectronics 429
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AUD 3.7714
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Single600 V2.35 V+/- 20 V80 A 283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40v60f
IXGH48N60A3


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS 428
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AUD 6.2857
Multiples of: 1

Single600 V1.18 V20 V120 A100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
RGTH40TK65GC11


IGBT Trench Field Stop 650 V 23 A 56 W Through Hole TO-3PFM
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ROHM 426
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AUD 4.0338
Multiples of: 1

Single650 V1.6 V30 V23 A200 nA  TO - 3PFMTubeSiThrough Hole56 W- 40 C+ 175 C 
RGW50TK65GVC11


IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
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ROHM 426
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AUD 4.6389
Multiples of: 1

Single650 V1.9 V30 V30 A   TO - 3PFM - 3TubeSiThrough Hole67 W- 40 C+ 175 C 
NGTB75N65FL2WG


ON Semiconductor IGBT Transistors
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ON Semiconductor 424
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AUD 10.6968
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         TubeSi    Ngtb75n65fl2
IKA06N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6.2A
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Infineon 422
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AUD 1.5287
Multiples of: 1

Single600 V1.5 V+/- 20 V10 A100 nA  TO - 220 - 3 FPTubeSiThrough Hole28 W- 40 C+ 150 CIka06n60
IXYH10N170CV1


IGBT Transistors 1700V/10A XPT IGBT w/ Diode
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IXYS 420
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AUD 9.7429
Multiples of: 1

Single1700 V4.1 V20 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole280 W- 55 C+ 175 C 
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