IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5152535455...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW30NC60KD


Transistor: IGBT; 600V; 28A; 200W; TO247-3
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STMicroelectronics 311
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AUD 3.06
Multiples of: 1

      200 W         
SGH40N60UFTU


Fairchild Semiconductor IGBT Transistors Dis High Perf IGBT
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ON Semiconductor 311
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AUD 5.5943
Multiples of: 1

Single600 V2.1 V+/- 20 V40 A+/- 100 nA  TO - 3P - 3TubeSiThrough Hole160 W- 55 C+ 150 CSgh40n60
IGW75N60T


Transistor: IGBT; 600V; 75A; 428W; TO247-3
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Infineon 310
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AUD 3.2057
Multiples of: 1

      428 W         
IKW40N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon 309
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AUD 2.9386
Multiples of: 1

Single650 V1.35 V20 V79 A100 nA  TO - 247 - 3TubeSiThrough Hole230 W- 40 C+ 175 CTrenchstop 5 S5
RGC80TSX8RGC11


IGBT Transistors REVERSE CONDUCTING IGBT
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ROHM 308
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AUD 7.982
Multiples of: 1

Single1.8 kV2.2 V30 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole535 W- 40 C+ 175 C 
Hot RGS80TSX2HRC11


IGBT Transistors 1200V 40A FIELD STOP TRENCH
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ROHM 308
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AUD 10.3243
Multiples of: 1

         Tube      
RGCL60TS60DGC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 307
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AUD 4.0952
Multiples of: 1

Single600 V1.4 V30 V48 A200 nA  TO - 247 - 3BulkSiThrough Hole111 W- 40 C+ 175 C 
FGL35N120FTDTU


Fairchild Semiconductor IGBT Transistors 1200V 35A Trench IGBT
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ON Semiconductor 303
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AUD 9.3973
Multiples of: 1

         TubeSi    Fgl35n120ftd
MLG50N60FUK


TO-247 IGBT Transistors / Modules ROHS
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Minos 299
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AUD 1.6121
Multiples of: 1

                
FGY160T65SPD_F085


IGBT Transistors 650V Field Stop Gen3 Trench IGBT
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ON Semiconductor 289
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AUD 15.1014
Multiples of: 1

Single650 V1.6 V+/- 20 V240 A+/- 250 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy160t65s_F085
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First...5152535455...

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