IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5152535455...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
CRG60T60AK3HD


TO-247 IGBTs ROHS
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CRMICRO 1206
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AUD 2.2182
Multiples of: 1

                
FGH75T65UPD


IGBT Transistors 650V 150A 187W
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ON Semiconductor 322
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AUD 5.94
Multiples of: 1

Single650 V2.3 V20 V150 A400 nA187 W TO - 247TubeSiThrough Hole187 W- 55 C+ 175 CFgh75t65
IKW75N60H3FKSA1


IGBT Transistors INDUSTRY 14
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Infineon 320
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AUD 6.2071
Multiples of: 1

Single600 V2.3 V20 V80 A100 nA428 W PG - TO - 247 - 3TubeSiThrough Hole428 W- 40 C+ 175 CIkw75n60
IXYH50N120C3


IGBT Transistors XPT IGBT C3-Class 1200V/105A
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IXYS 320
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AUD 10.9843
Multiples of: 1

Single1200 V2.5 V30 V105 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 150 CIxyh50n120
IXYH30N120C3D1


IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
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IXYS 317
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AUD 10.3086
Multiples of: 1

Single1200 V3.7 V30 V66 A100 nA  TO - 247AD - 3TubeSiThrough Hole416 W- 55 C+ 150 CIxyh30n120
IXYK110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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IXYS 315
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AUD 27.4303
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 5
AFGHL75T65SQ


IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247-3
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ON Semiconductor 314
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AUD 4.7771
Multiples of: 1

        TO - 247 - 3 VARIANTTube     Automotive, Aec - Q101
IGW75N60T


Transistor: IGBT; 600V; 75A; 428W; TO247-3
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Infineon 311
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AUD 3.2057
Multiples of: 1

      428 W         
SGH40N60UFTU


Fairchild Semiconductor IGBT Transistors Dis High Perf IGBT
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ON Semiconductor 311
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AUD 5.6729
Multiples of: 1

Single600 V2.1 V+/- 20 V40 A+/- 100 nA  TO - 3P - 3TubeSiThrough Hole160 W- 55 C+ 150 CSgh40n60
IXYX140N120A4


IGBT Transistors XPT thin-wafer technology 4th generation GenX4 Trench IGBT. Disc IGBT XPT-GenX4 PLUS247
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IXYS 291
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AUD 62.0557
Multiples of: 1

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First...5152535455...

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