IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 294
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AUD 7.2914
Multiples of: 1

Single1.2 kV2.3 V+/- 20 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgh20n120
FGI3236_F085


Fairchild Semiconductor Motor Motion Ignition Controllers & Drivers EcoSPARK 320mJ 360V N-Chan Ignition
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 293
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AUD 3.2686
Multiples of: 1

        TO - 262TubeSiThrough Hole - 40 C+ 175 CFgi3236
IKA15N65F5


Transistor: IGBT; 650V; 14A; 33.3W; TO220FP; Series: F5
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Infineon 292
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AUD 1.4284
Multiples of: 1

      33.3 W   Trenchstop 5    F5
NGB8206ANSL3G


IGBT Transistors IGBT 20A 350V N-CHANNEL
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ON Semiconductor 291
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AUD 1.0615
Multiples of: 1

 390 V 15 V20 A350 uA150 W D2PAK - 3TubeSiThrough Hole150 W- 55 C+ 175 CNgb8206a
RGT50TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM 291
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AUD 3.8507
Multiples of: 1

 650 V1.65 V+/- 30 V48 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole174 W- 40 C+ 175 CRgt50ts65d
RGT60TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM 291
Ships to you
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AUD 4.2448
Multiples of: 1

 650 V1.65 V+/- 30 V55 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole194 W- 40 C+ 175 CRgt60ts65d
IRGB4615DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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Infineon 291
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AUD 1.9652
Multiples of: 1

Single600 V2 V+/- 20 V23 A100 nA99 W TO - 220AB - 3BulkSiThrough Hole99 W- 40 C+ 175 C 
STGP20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 291
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AUD 2.0737
Multiples of: 300

Single600 V2.2 V20 V40 A250 nA  TO - 220 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
FGP3440G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor 291
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AUD 3.1071
Multiples of: 50

Single400 V1.6 V+/- 10 V26.9 A   TO - 220AB - 3TubeSiThrough Hole166 W- 40 C+ 175 CFgp3440g2_F085
IGW40N120H3


Transistor: IGBT; 1200V; 40A; 483W; TO247-3; Series: H3
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Infineon 290
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AUD 8.46
Multiples of: 1

      483 W   Trenchstop 3    H3
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First...5152535455...

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