IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5152535455...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKA15N65F5


Transistor: IGBT; 650V; 14A; 33.3W; TO220FP; Series: F5
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Infineon 292
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AUD 1.1821
Multiples of: 1

      33.3 W   Trenchstop 5    F5
IXGH48N60B3D1


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS 292
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AUD 5.2866
Multiples of: 1

Single600 V1.8 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXYH30N120C3


IGBT Transistors 1200V XPT GenX3 IGBT
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IXYS 292
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AUD 7.1413
Multiples of: 1

Single1200 V3.7 V30 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole500 W- 55 C+ 150 CIxyh30n120
NGB8206ANSL3G


IGBT Transistors IGBT 20A 350V N-CHANNEL
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ON Semiconductor 291
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AUD 1.0615
Multiples of: 1

 390 V 15 V20 A350 uA150 W D2PAK - 3TubeSiThrough Hole150 W- 55 C+ 175 CNgb8206a
IHW20N135R5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC
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Infineon 291
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AUD 1.9277
Multiples of: 1

Single1350 V1.65 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole288 W- 40 C+ 175 CRc
RGT50TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM 291
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AUD 3.8507
Multiples of: 1

 650 V1.65 V+/- 30 V48 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole174 W- 40 C+ 175 CRgt50ts65d
RGT60TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM 291
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AUD 4.2448
Multiples of: 1

 650 V1.65 V+/- 30 V55 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole194 W- 40 C+ 175 CRgt60ts65d
IRGB4615DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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Infineon 291
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AUD 2.0532
Multiples of: 1

Single600 V2 V+/- 20 V23 A100 nA99 W TO - 220AB - 3BulkSiThrough Hole99 W- 40 C+ 175 C 
STGFW40H65FB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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STMicroelectronics 291
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AUD 2.427
Multiples of: 1

Single650 V2 V 80 A250 nA  TO - 3PF SiThrough Hole62.5 W  600 - 650V Igbts
FGP3440G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor 291
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AUD 3.1586
Multiples of: 50

Single400 V1.6 V+/- 10 V26.9 A   TO - 220AB - 3TubeSiThrough Hole166 W- 40 C+ 175 CFgp3440g2_F085
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First...5152535455...

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